国家/地区 美国（34）
IPC部 C（34）
IPC大类 C01（34）
IPC小类 C01B（34）
IPC C01B031/04（29） C23C016/26（23） C01B031/02（19）
B82Y040/00（9） C01B032/186（9） B82Y030/00（8）
C23C016/44（7） C23C016/06（5） H01L029/16（5）
C23C016/02（4） C23C016/46（4） H01B013/00（4）
H01L021/02（4） H01L021/20（4） B01J019/18（3）
发明人 CHOI J（3） JUNG M（3） MOON J（3）
CHOI M（2） JUNG Y（2） KIM T（2）
KIM T H（2） LEE Y（2） SHIN H（2）
YOON J（2） YOON J H（2）
公开年 2014（34）
申请年 2013（21）  2014（10）  2012（3） 
专利权人 SAMSUNG ELEC.（4） LG ELECTRONI.（3） HANWHA TECHW.（2） SAMSUNG TECH.（2）
SHENZHEN CHI.（2） UNIV SUNGKYU.（2）

Manufacture of graphene for electric component, involves forming metal catalytic layer on substrate, introducing cover material on catalytic layer, and growing graphene on catalytic layer by carrying out chemical vapor deposition.

CHO K, BONG H, CHO K W

Manufacture of graphene as base material for electronic circuits, carbon-based electronic device and electromagnetic device, involves forming metal layer on thermal expansion compensation substrate, and forming graphene on metal layer.

CHOI M, KIM T, MOON J, JUNG M, KIM T H

Production of graphene for wiring film of three-dimensional stacked memory, involves decomposing carbon-containing gas with low reactivity in space which opposes substrate, and decomposing carbon-containing gas with high reactivity.

KAGAYA M, MATSUMOTO T, NISHIDE D

Apparatus for manufacturing graphene comprises a first chamber for supplying a carbon source under a first condition, a second chamber for supplying a carbon source, and a feeder for continuously supplying a catalyst metal.

MOON J, CHOI M, JUNG M

Graphene ball conductive adhesive preparation by preparing polymer microsphere using monomer mixture, performing chemical vapor deposition to grow graphene on microsphere surface, and dispersing graphene ball into epoxy resin glue system.

CHEN Y, LI J, LI Y, ZHANG X, LEE Y

Method for growing graphene layer on metal foil for e.g. forming field-effect transistor, involves positioning foil in vessel placed in chamber, introducing hydrogen, annealing foil, introducing methane and depositing carbon on foil.

ZHOU C, ZHANG Y, ZHANG L

Manufacturing graphene layer by performing sputtering process to form graphite layer on substrate, and performing lithography process on graphite layer for thinning graphite layer and making graphite layer thinned to become graphene layer.

HUANG C, CHIU S, CHUNG C, WU B, HUANG J, QIU S, ZHONG C, HUANG C H, CHIU S M, CHUNG C J, WU B H

Board for forming graphene layer, comprises board layer; metal catalyst layer disposed on the board layer and functioning as a catalyst for forming the graphene layer; and stress reduction layer to reduce stress of the metal catalyst layer.

CHO B J, MUN J H

Producing graphene by plasma-enhanced chemical vapor deposition, comprises applying potential and exciting plasma-forming gas between metal substrate and carbonaceous electrode, ablating reactive carbon species, and growing graphene.

SINTON S W, BEDWORTH P V

Graphene wiring for semiconductor device comprises substrate, catalyst layer on substrate, graphene layer on catalyst layer, and dopant layer which contains atom or molecule in side surface of graphene layer.

MIYAZAKI H, SAKAI T, KATAGIRI M, YAMAZAKI Y, SAKUMA H, SUZUKI M, SAKUMA N