国家/地区 美国（32）
IPC部 C（32）
IPC大类 C23（32）
IPC小类 C30B（32）
IPC C01B031/04（16） C30B029/02（16） C30B025/18（15）
H01L021/02（15） C23C016/26（14） B82Y040/00（13）
B82Y030/00（11） C23C016/02（11） C01B031/02（10）
H01L029/16（10） C23C016/34（9） C01B032/186（8）
H01L021/205（7） H01B001/04（6） H01L021/20（6）
发明人 VEERASAMY V（3） VEERASAMY V S（3） FAN F Y（2）
FAN S（2） GI Y（2） WEI Y（2）
ZHANG Y（2）
公开年 2014（6） 2021（5） 2011（4） 2013（4） 2015（3） 2016（3） 2012（2） 2017（2） 2018（2）
申请年 2012（5）  2014（5）  2016（5）  2020（4）  2009（3）  2013（3）  2011（2）  2017（2） 
专利权人 GUARDIAN GLA.（3） GUARDIAN IND（3） GUARDIAN IND.（3） HON HAI PREC.（2）
HONGFUJIN PR.（2） SAMSUNG TECH.（2） UNIV TSINGHU.（2） UNIV XIDIAN（2）
ZHANG Y（2）

Phonovoltaic cell used as part of phonovoltaic pile of contiguous phonovoltaic cell comprises first and second conductor layer, first boron layer in contact with the first conductor layer, second boron layer in contact with the second boron layer.

CURRAN P

Fabricating hexagonal boron nitride comprises placing catalytic metal having hexagonal crystal structure and lattice mismatch with hexagonal boron nitride in chamber and growing hexagonal boron nitride on the catalytic metal while supplying nitrogen source and boron source into the chamber.

LEE C, SHIN H, HONG S, MA K, LEE C S, SUK S H, SHIN H J, LI C, SHEN X

System for growing crystalline material, has optical emission spectrometer (OES) that controls parameter in closed loop and maintains required proposition of plasma constituent for growth of crystalline materials in microwave plasma reactor.

SHARDA T, BHANDARI R, RAJNEESH B, TARUN S

Composition of article used for solar cell, comprises sapphire, silicon, gallium oxide or specific group semiconductor substrate, and intermediate specific group semiconductor layer, graphene layer, holes, and nanowires or nanopyramids.

MUNSHI M, WEMAN H, DHEERAJ D L, FIMLAND B M, VIGEN L, BARRIET D, PIMLANDBJOERNOBEEM, WIGGENREIDULPH, DAVID B

Two dimensional (2D) hetero structure used in article of manufacture, comprises graphene deposited on substrate and borophene coupled with graphene on substrate to form 2D borophene- graphene hetero structure.

HERSAM M C, LIU X

Manufacturing multilayer graphene e.g. suspended or deposited multilayer graphene used for device e.g. sensor involves depositing graphene monolayer having protective layer on top on sample containing another graphene monolayer.

ZURUTUZA ELORZA A, CENTENO PEREZ A, PESQUERA RODRIGUES A, ZURUTUZA E A, CENTENO P A, PESQUERA R A

Semiconductor structure having multiple-porous graphene layer, includes gallium nitride layer formed on multiple-porous graphene layer which is formed on semiconductor substrate.

LAI C, TAN C, SINGH P, LAI C S

Transfer-free method for forming high-quality graphene layer on graphene electrode, involves depositing titanium layer on base substrate by sputtering process, and growing graphene on deposited layer by chemical vapor deposition process.

YOON S, PARK B, YOON S G, PARK B J

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M