国家/地区 美国（39）
IPC部 C（39）
IPC大类 C23（39）
IPC小类 C23C（36） C01B（18） H01L（13）
B82Y（10） B01J（6） H01B（6）
C23F（5） B05D（4） B32B（4）
C30B（3） G03F（3） H01J（3）
B22F（2） C01G（2） C10M（2）
IPC C23C016/26（25） B82Y030/00（10） C01B032/186（9）
C01B032/182（8） B82Y040/00（6） H01B001/04（6）
H01L021/02（6） C01B032/184（5） C23C014/18（5）
C23C016/02（5） C23C016/04（5） C23C016/54（5）
H01L029/16（5） C01B032/194（4） H01B013/00（4）
发明人 FARQUHAR J J（3） SEAH C M（3） BERMAN D（2）
CHEN C（2） CHOI J（2） ERDEMIR A（2）
JANG B Z（2） LI X（2） LIN Y（2）
LIU P（2） MATSUMOTO T（2） SUMANT A V（2）
TU C（2） ZHAMU A（2）
公开年 2018（39）
申请年 2017（18）  2018（13）  2016（7） 
专利权人 FOURTE INT S.（3） NANOTEK INST.（2） TAIWAN SEMIC.（2） TOKYO ELECTR.（2）
UCHICAGO ARG.（2）

Synthesis of graphene for optoelectronic devices, involves placing copper-nickel thin film laminate in chemical vapor deposition, bringing graphene precursor into contact with thin film laminate, and performing chemical vapor deposition.

CHO K, YOO M S, LEE H C, CHO K W

Transfer-free method for producing graphene thin film involves forming titanium buffer layer on target substrate and growing graphene thin film on titanium buffer layer in which both steps are performed in oxygen-free atmosphere.

YOON S, PARK B, YOON S G, PARK B J

Method for processing substrate of MOSFET during manufacturing of integrated circuit, involves providing planarized substrate, followed by selectively depositing silicon dioxide film on first material and removing graphene layer.

TAPILY K N, MATSUMOTO T, KASHIWAGI Y, LEUSINK G J

Method for generating graphene film, involves placing substrate for graphene film synthesis inside of quasi-enclosed substrate holder and generating graphene film on substrate through chemical vapor deposition.

BOL A A, LI X

Method for preparing noble metal nanocomposites, involves preparing aqueous solution of graphene oxide, adding aqueous solution of salt of metal to solution of graphene oxide followed by adding extract leaves and forming nanoparticles.

ALSHATWI A A, ATHINARAYANAN J, PERIASAMY V S

Graphene-manufacturing apparatus includes reaction chamber defining reaction space, mold unit including mold body and outer surface, and driving unit connected to mold unit.

HUANG K, HUANG G

Article comprises substrate, oxide layer on substrate, epoxy-based primer attached to oxide layer opposite substrate, and topcoat attached to epoxy-based primer opposite oxide layer, where primer contains graphene nanoplatelets.

POTEET S

Wiring for semiconductor device, includes first metal portion, multilayer graphene, and second metal portion which are interposed between conductive portions.

KATAGIRI M, SAITO T, SAKAI T, MIYAZAKI H

Method for doping synthesized graphene by high temperature heat treatment in gas atmosphere containing dopant,.

HAM M H, SON M W, MYUNGWOO S

Manufacturing multilayer graphene e.g. suspended or deposited multilayer graphene used for device e.g. sensor involves depositing graphene monolayer having protective layer on top on sample containing another graphene monolayer.

ZURUTUZA ELORZA A, CENTENO PEREZ A, PESQUERA RODRIGUES A, ZURUTUZA E A, CENTENO P A, PESQUERA R A