国家/地区 世界知识产权组织（30）
IPC部 C（30）
IPC大类 C01（30）
IPC小类 C01B（30）
IPC C23C016/44（30）
发明人 LEE J（3） MATSUMOTO T（3） HEE L（2）
HYUN L J（2） IFUKU R（2） IMSUNGWOO（2）
JEON S（2） JEON Y M（2） LEE H S（2）
LIM H H（2） LIM J（2） LIM J C（2）
LIM S W（2） OH S（2） OZYILMAZ B（2）
公开年 2015（5） 2021（5） 2013（4） 2014（4） 2012（3） 2022（3） 2011（2） 2017（2）
申请年 2012（5）  2021（5）  2013（4）  2014（4）  2010（2）  2015（2）  2016（2）  2020（2） 
专利权人 TOKYO ELECTR.（3） DAEJOO ELECT.（2） KOREA ADV IN.（2） KOREA ADVANC.（2）
UNIV SINGAPO.（2）

Processing substrate by loading substrate into processing container, forming carbon film on substrate with plasma of mixed gas containing carbon-containing gas while inside of processing container is maintained at pressure, and changing inside of processing container.

WADA M, IFUKU R, MATSUMOTO T, YAMADA H, TAKASHI M

Porous silicon-carbon composite used for negative electrode active material for lithium secondary battery, comprises silicon particles, magnesium fluoride, and carbon.

LIM J C, LEE J, JEON Y M, LIM S W, PARK J G, LEE H S, LIM H H, NAM S J, LEE E, LIM J, HYUN L J, IMSUNGWOO, HEE L, JIN N, PARK S

Porous silicon-based carbon composite used for forming negative electrode active material, comprises silicon particles capable of intercalating and de-intercalating lithium, magnesium compound, and carbon, and has preset molar ratio of magnesium atoms with respect to silicon atoms.

PARK J G, LEE H S, JEON Y M, OH S M, PARK H S, LIM S W, LIM H H, LIM J C, LEE J H, HUNSOO P, IMSUNGWOO, HEE L, LIM J, HYUN L J

Structure e.g. porous metal-coated structure used for e.g. catalytic application, comprises substrate comprising activated adsorbent material, and metal material deposited on substrate.

PEPIN P, ETHRIDGE K, THOMSON C, HOLBROOK B, ESRIDGE K

Seed layer for inducing nucleation to form layer of material used for fabricating semiconducting devices, comprises layer of two-dimensional monolayer amorphous material with disordered atomic structure to form electric potential wells for bonding adatoms to seed layer by van der Waals interaction.

OEZYILMAZ B, TOH C T, ABIDI I H, OJIYLMAZ B, TOH C, ZHUO Z, OZYILMAZ B

Continuously or semi-continuously producing graphene by introducing particles comprising core into stationary deposition chamber and subjecting to plasma enhanced chemical vapor deposition using carbon-containing gas to form solid graphene.

BEUKES J A, HUANG F

Film forming by cleaning interior of treatment container, extracting and removing oxygen inside treatment container, introducing substrate into treatment container, and forming carbon film on substrate by plasma chemical vapor deposition.

MAKOTO W, TAKASHI M, NOBUTAKE K, RYOTA I, MASAHITO S, HIROKAZU U, MATSUMOTO T, KABURAGI N, IFUKU R, SUGIURA M, UEDA H, WADA M, KABUKI N

Composition useful as catalysts and electrodes, comprises a nanoporous carbon powder comprising nanopores having disposed in it copper metal nanostructures and an elemental copper nanowires.

NAGEL C J, BRODEUR C L, NAZEL C A J, BRODARD C L

Composition comprises discrete nanostructures of functionalized graphene layer and core species bound to the graphene layer and core species reversibly covalently binds first portion of the layer to a second portion of the graphene layer.

HUNTER I W, SWAGER T M, JEON I, PARK G H, WANG P

Production method for producing graphene on copper substrate, involves continuously monitoring temperature of copper sheets and heating copper sheets to specified temperature for predetermined time using electromagnetic induction heater.

HABERLE TAPIA P, ORELLANA GOMEZ C, HABERLE T P, ORELLANA G C, HAEBERLE TAPIA P, HAEBERLE T P