国家/地区 中国（7）
IPC部 H（4） C（3）
IPC大类 H01（4） C23（3）
IPC小类 H01L（4） C23C（3）
IPC C23C016/26（3） H01L021/336（3） H01L029/78（3）
发明人 LIU J（3） LIU X（3） RAO Z（3）
XIA Y（3） HAN M（2） JI Z（2）
LIU M（2） SHANG L（2） WANG H（2）
WANG W（2）
公开年 2011（4） 2012（3）
申请年 2010（7）
专利权人 INST MICROELECTRONICS CHINESE ACAD SCI（7）

FET, has source and drain contact electrodes and graphene trench region that are linked together, where graphene trench region is formed on upper part of insulating substrate.

LIU X, LIU M, HAN M, JI Z, WANG H, SHANG L

FET, has source/drain contact electrode and graphene trench region formed on insulating medium layer, where source contact and drain contact electrodes are respectively connected with graphene trench region.

LIU X, LIU M, HAN M, JI Z, WANG H, SHANG L

Graphene device manufacturing method, involves obtaining substrate, forming negative type or positive type graphene layer on substrate, forming grid regionon graphene layer, and forming inter-layer on graphene layer.

CHEN D, WANG W, ZHAO C

Preparation of single-atom layer graphene film comprises performing chemical absorption and halogenation between diazomethane and aerated gas iodine simple substance to form instable carbon-iodine key, and irradiating.

LIU J, XIA Y, RAO Z

Graphene device structure for complementary metal-oxide-semiconductor, has semiconductor doped regions separated from gate region, where contacts of structure are formed on semiconductor doped regions.

LIU X, ZHU H, WANG W, LIANG Q, JIN Z, ZHONG H, YE T

Preparing single atomic layer graphene film comprises placing silicon carbide substrate in reaction cavity of atomic layer deposition device, feeding carbon source gas into cavity, halogenating and generating corresponding by-product.

LIU J, RAO Z, XIA Y

Carbon chemical adsorbing useful for preparing of graphene thin film by atom layer deposition, comprises forming covalent bond with an atom on surface of a substrate by forming a substance containing carbon atoms having unbounded electrons.

LIU J, RAO Z, XIA Y