国家/地区 韩国（20） 美国（17） 日本（5） 欧洲专利局（EPO）（3） 中国（2）
IPC部 H（17） B（16） C（13）
IPC大类 H01（17） C01（13） B82（10）
B05（7） B32（7） C23（5）
B44（3）
IPC小类 C01B（13） H01L（12） H01B（8）
B05D（7） B32B（7） B82Y（6）
C23C（5） B82B（4） B44C（3）
H01J（2）
IPC C01B031/02（11） C01B031/04（9） B82Y030/00（6）
H01B001/04（6） B32B009/00（5） B82Y040/00（5）
B82B003/00（4） H01L021/20（4） B32B015/04（3）
C23C016/26（3） H01L029/786（3） B05D001/02（2）
B05D001/36（2） B05D003/00（2） B32B003/00（2）
发明人 CHOI J Y（8） CHOI J（7） SEO S A（7）
CHUNG H J（6） HEO J S（6） WOO Y S（6）
CHOI W（5） CHOI W M（5） CHUNG H（5）
HEO J（5） SEO S（5） SHIN H J（5）
WOO Y（5） SHIN H（4） CHOI B（3）
公开年 2011（20）
申请年 2010（20）
专利权人 SAMSUNG ELECTRONICS CO LTD（20）

Super hydrophobic graphene, has surface part in which multiple cylindrical projections are formed, where one of projections occupies 20 percent of graphene in total body surface area.

CHOI J Y, HAN G H, LEE Y H, SHIN H J

Method of manufacturing graphene used for electronic device, involves forming graphene directly on germanium layer by supplying carbon-containing gas into chamber in which substrate is located.

LEE E, CHOI B, WHANG D, LEE J, CHOI B L, LEE E K, LEE J H, WHANG D M

Electric conductor for use in e.g. electric component, has laminating structure for laminating conductive oxide layer i.e. transparent conductive oxide layer, and graphene layer, where graphene layer is repeatedly laminated by turns.

JEON S H, SEO S A, SONG I H, KIM C J, SEO D

Graphene layer manufacturing method for graphene FET, involves forming graphene layer on surface of silicon carbide substrate by performing laser annealing on surface of substrate in which laser beam is irradiated.

WOO Y S, HONG K H, SEO S A, CHUNG H J, HEO J S

Spin valve device e.g. storage node useful in magnetic memory device and spin transfer nano-oscillator, comprises lower magnetic layer, graphene sheet on lower magnetic layer, upper magnetic layer on graphene sheet, and spacer.

HEO J, SEO S, WOO Y, CHUNG H, HEO J S, SEO S A, WOO Y S, CHUNG H J

Material used in electrical device such as solar cell comprises graphene; and inorganic material having crystal system, where at least one crystal plane of the inorganic material is oriented parallel to the plane of the graphene.

CHOI J, CHOI W, CHOI D, KIM S, SHIN K, CHOI J Y, CHOI W M, CHOI D H, KIM S W, SHIN K S

Self-emissive organic light emitting device comprises transparent substrate, first electrode that is disposed on substrate and includes graphene, and second electrode disposed on substrate and separated apart from first electrode.

CHOI J, CHOI W, CHOI J Y, CHOI W M

Composition, useful in electrode, which is useful in display device comprising e.g. organic light emitting display device, and in solar cell, comprises graphene and dopant comprising an organic dopant and/or inorganic dopant.

SHIN H, CHOI W, CHOI J, YOON S, SHIN H J, CHOI W M, CHOI J Y, YOON S M

Composite structure useful in logic device, memory device and supercapacitor, comprises first graphene, second graphene separated apart from first graphene, one-dimensional nanostructure, and substrate on which graphenes is disposed.

CHOI B, LEE E, WHANG D, KIM B, CHOE P Y, I E K, HWANG T M, KIM P S, CHOI B L, KIM B S, LEE E K, WHANG D M

Graphene laminate, useful e.g. in transparent electrode, super-capacitor, fuel cell and solar cell, comprises substrate, binder layer on substrate, and graphene on binder layer, where the graphene is bound to substrate by binder layer.

SHIN H, CHOI J, HAN G, LEE Y, CHOI J Y, HAN G H, LEE Y H, SHIN H J