国家/地区 中国（56） 美国（2） 世界知识产权组织（2）
IPC部 C（41） H（28） B（6）
G（2）
IPC大类 H01（28） C01（27） C30（13）
C23（10） B82（6） C04（5）
G01（2）
IPC小类 H01L（28） C01B（27） C30B（13）
C23C（10） B82Y（6） C04B（5）
G01R（2）
IPC C01B031/04（23） C30B029/02（9） H01L021/02（9）
C23C016/26（8） C30B025/18（6） H01L021/205（6）
C04B041/50（5） C30B025/02（5） H01L021/04（5）
H01L021/324（5） B82Y040/00（4） C01B031/02（4）
C04B041/85（4） H01L029/78（4） C23C016/56（3）
发明人 GUO H（36） ZHANG K（36） ZHANG Y（36）
LEI T（33） DENG P（21） CHAI Z（15）
HAN D（15） HAO Y（15） NING J（15）
WANG D（15） YAN Y（15） ZHANG J（15）
ZHAO Y（15） ZHANG F（13） ZHANG C（10）
公开年 2012（28） 2013（28）
申请年 2012（56）
专利权人 UNIV XIDIAN（56）

Graphene FET has source electrode and drain electrode that are respectively located at two ends of graphene channel layer.

ZHANG P, BAO J, MA Z, WU Y, ZHUANG Y, ZHANG C

Carbon nano-tube probe tip, has probe tip main body provided with thin film that is made of graphene material.

ZHANG P, BAO J, MA Z, WU Y, ZHUANG Y, CHEN Q

Graphene nano-belt FET, has gate dielectric layer placed at upper and lower sides of channel layer, substrate formed with gate dielectric layer, and source electrode and drain electrode placed at two ends of channel layer.

ZHANG P, BAO J, MA Z, WU Y, ZHUANG Y, ZHANG C

Graphene nanoribbon FET comprises gate dielectric layers that are respectively located at upper side and lower side of channel layer, and source and drain electrodes that are respectively located at ends of channel layer.

ZHANG P, WU Y, BAO J, MA Z, ZHUANG Y, ZHANG C

Method for laser-assisted lossless transfer of chemical vapor deposition graphene, involves growing gallium nitride and copper layers on sapphire substrate in sequence, depositing graphene on copper layer in chemical vapor deposition mode.

HAO Y, NING J, HAN D, YAN Y, WANG D, ZHANG J, CHAI Z

Graphene FET, has substrate formed with gate dielectric layer, source electrode and drain electrode that are respectively located at two ends of graphene channel layer, and top gate electrode arranged on top part of gate dielectric layer.

MA Z, ZHANG P, ZHANG C, ZHUANG Y, BAO J, WU Y

Method for removing ultrasonic-assisted graphene photoresist, involves injecting pure acetone into graphene sample, analyzing and cleaning sample, and rinsing cleaned sample in absolute ethyl alcohol followed by washing, drying and storing.

HAN D, CHAI Z, NING J, ZHANG J, HAO Y, YAN Y, WANG D

Method for stripping graphene, involves fixing graphite between upper substrate and lower substrate, treating resultant material in ultrasonic generator, and separating graphene.

NING J, ZHANG J, HAN D, CHAI Z, HAO Y, WANG D, YAN Y

Method for performing non-contact-type Hall effect measurement of graphene migration rate of semiconductor current carrier, involves triggering projection position of electromagnetic wave, and carrying out multi-point measuring.

HAO Y, HAN D, WANG D, ZHANG J, NING J, CHAI Z, YAN Y

Preparation of self-assembly growth micro-nano-scale graphene used as electrode by carrying out electron beam evaporation of transition metal film on substrate, forming transition metal particles and carrying out chemical vapor deposition.

WANG D, ZHANG J, CHAI Z, HAO Y, HAN D, YAN Y, NING J