国家/地区 韩国（12）
IPC部 C（9） B（6） H（6）
IPC大类 C01（8） H01（6） B82（4）
B01（2） B32（2） H05（2）
IPC小类 C01B（8） H01L（5） B82B（3）
B01J（2） B32B（2） B82Y（2）
IPC C01B031/02（7） B82B003/00（3） B01J019/12（2）
B32B009/00（2） B82Y030/00（2） B82Y040/00（2）
C01B031/04（2） H01L051/50（2）
发明人 GON S J（2） KIM C K（2） KIM H（2）
LEE H J（2） LEE S S（2） LIM S H（2）
PARK M（2）
公开年 2014（5） 2013（4） 2012（3）
申请年 2012（12）
专利权人 KOREA INST SCI TECHNOLOGY（12）

Organic electroluminescent device comprises an anode, a hole injection layer, a light emitting layer, an electron injection layer and a cathode stacked on a substrate, and graphene oxide on hole injection layer or electron injection layer.

SHIN S B, KIM S I, KIM Y H, KIM C K, KIM J Y, KIM Y T

Manufacture of doped graphene for manufacturing semiconductor, involves mixing graphite powder and acid solution, oxidizing, drying, impregnating graphite oxide solid to organic compound aqueous solution, microwave heating and reducing.

LEE S S, KIM H, PARK M, LIM S H, GON S J, KWANG H L, KIM T A

Manufacturing fiber yarns coated with reduced graphene oxide, comprises swelling hydrophobic fiber yarns, coating graphene oxide on swollen fiber yarns by immersing in polar aprotic solvent dispersed with graphene oxide and reducing.

SONG K G, HONG S W, RYU J H, PILLAI R S, JUNG J H, GEUN S G, WON H S, HUI R J, HYEON J J

Polyphase carbon nanostructures comprise graphene sheath made of graphene layer, and diamond nano-flakes inserted into graphene sheath.

LEE W S, LEE H J, BAIK Y J, PARK J K

Optical switch used in optoelectronic and computing device, has pump light source which controls permeability of incident light through graphene layer, such that irradiated incident light is selectively irradiated into graphene layer.

KIM J H, KIM D G, JUN S C, LEE J S, LEE S, WOO D H, LEE T J, KIM C K, LEE H J

Manufacturing boron-doped reduced graphene, useful as semiconductor with p-type characteristics, comprises adding boron oxide to graphene oxide, removing solvent from resulting solution to obtain solid mixture, and heating the solid mixture.

KIM H, DA YOUNG Y, PARK M, LIM S H, GON S J, LEE S S

Producing a graphene to make transparent electrode of e.g. optical detector, comprises depositing catalyst on substrate, heating substrate by vapor deposition of carbon contained in catalyst, cooling heated substrate and etching.

SONG Y W, LIM J A, KANG D S, KIM W J

Metal oxide semiconductor-graphene core-shell quantum dot useful in LED and its fabrication, comprises a structure, where metal oxide semiconductor nanoparticle is a core and the core is covered with graphene in a shell shape.

CHOI W, SON D I, KWON B W, PARK D H, GUK C W, IK S D, UK K B, HUI P D, WON K C, DONG I S, BYOUNG W K, DONG H P

Passive element layer of e.g. display element used in e.g. electric equipment, has main layer that is provided with electromagnetic wave attenuation and heat radiation function at near-field region, and is equipped with graphene layer.

KIM S W, HONG B H, CHOI J, KANG J, HWANG S H, BUNG C J, HUI H B, HWI H S, MO G J, U KIM S, HEE H B

Graphene electronic device e.g. FET, has graphene channel layer formed on gate insulating layer, source electrode formed on end of graphene channel layer, and drain electrode formed on another end of graphene channel layer.

SONG H, CHO B, SEO S, SHIN W, SONG H J, CHO B J, SEO S A, SHIN W C, SONG C, SIN W