国家/地区 中国（28） 世界知识产权组织（2）
IPC部 C（17） H（10） B（4）
G（4）
IPC大类 C01（11） H01（10） C09（4）
G01（4） B82（3） C23（3）
C30（3）
IPC小类 C01B（11） H01L（8） C09K（4）
B82Y（3） C23C（3） C30B（3）
G01N（3）
IPC C01B031/04（10） H01L021/02（3） H01L021/336（3）
B82Y040/00（2） C01B031/02（2） C01B032/186（2）
C01B032/19（2） C09K005/14（2） C09K011/65（2）
C23C016/26（2） C30B025/00（2） C30B029/02（2）
H01L021/28（2） H01L029/78（2）
发明人 XIE X（14） DING G（9） JIANG M（7）
WANG H（6） ZHANG Y（6） SUN J（5）
WU T（5） ZHANG H（5） CHEN Z（4）
DI Z（4） LI T（4） LIANG C（4）
WANG B（4） WANG G（4） WANG Y（4）
公开年 2014（15） 2013（11） 2015（2）
申请年 2013（28）
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（28）

Use of germanium based graphene for producing antimicrobial effect by inhibiting Gram-positive bacteria e.g. Staphylococcus aureus, and Gram-negative bacteria e.g. Escherichia coli, providing anti-fatigue effect and inhibiting tumor.

DI Z, CHEN D, DING G, GUO Q, LI J, LIU X, WANG G, XIE X, ZHANG M, ZHENG X

Preparation of graphene film comprises providing insulating substrate, placing in growth chamber, heating, introducing gas containing catalytic element, reacting, and introducing carbon source.

DING G, JIANG M, LU G, XIE X, TANG S, WU T, XIE H, ZHANG X, JIANG D, WANG H

Preparation of sulfur-doped graphene by placing graphene in chemical vapor deposition reaction chamber, carrying out inert gas aeration and exhaust treatment, introducing sulfur source, and introducing hydrogen and inert gas atmosphere.

LI T, LIANG C, WANG Y

Preparing sulfur doped graphene using chemical vapor deposition method comprises e.g. providing metal substrate, placing in chemical vapor deposition reaction chamber, introducing inert gas, carrying out aeration and exhaust gas treatment.

LI T, LIANG C, WANG Y

Method for transferring graphene into flexible substrate, involves coating flexible substrate with glue, attaching flexible substrate with graphene of raw substrate, and washing graphene substrate or flexible substrate and hard substrate.

LI T, LIANG C, WANG W, WANG Y

Transferring graphene to intermediate layer used for preparing graphene electric device, involves mixing polydimethylsiloxane glue with raw substrate, where polydimethylsiloxane glue is solidified into polydimethylsiloxane transition layer.

LI T, LIANG C, WANG W, WANG Y

Preparation of graphene-based chip cooling material by reacting substrate, heating, plasma treating, depositing graphene, forming, cooling and transferring.

LIU J, XIE X, WANG L, ZHANG Y, WANG H

Nanofiltration membrane for preparing fluorescent graphene quantum dots contains functional layer containing set of filter holes and supporting layer containing set of filter holes in which supporting layer is connected to functional layer.

XIE X, JIANG M, XU X, YANG S, LI X, DING G, SUN J, HE P

Preparation of graphene crystal domain involves forming copper-nickel double sided substrate, introducing hydrogen, reacting, introducing carbon source, growing graphene crystal domain, introducing argon gas and cooling.

YANG C, WU T, LU G, ZHANG X

Terahertz photoelectric detector, has surface cover fixed with medium layer, and single layer graphene part receiving bias voltage according to photoconductive characteristic peak position to realize terahertz frequency detection process.

WANG F, CAO J