国家/地区 日本（8）
IPC部 H（7） C（6） B（4）
IPC大类 C01（6） H01（6） B82（4）
IPC小类 C01B（6） H01L（5） B82Y（4）
IPC C01B031/02（6） B82Y040/00（4） H01L021/28（4）
H01L021/336（4） H01L029/78（4） B82Y030/00（3）
H01L029/06（3） C01B031/04（2） C01B032/15（2）
C01B032/18（2） C01B032/182（2） H01L021/285（2）
H01L029/417（2） H01L029/786（2） H01L051/05（2）
发明人 ISHIHARA M（3） HASEGAWA M（2） KAWABATA A（2）
OKIKAWA Y（2）
公开年 2014（6）
申请年 2013（8）
专利权人 NAT INST ADVANCED IND SCI TECHNOLOGY（8）

Manufacturing method of graphene laminated body, involves processing graphene film with fine adhesive sheet and doping solution which does not react chemically, after temporarily fixing graphene film on fine adhesive sheet.

ISHIHARA M

Defect repairing method of graphene film e.g. planar crystalline carbon film, involves irradiating laser by giving carbon source to portion identified as defect portion of film, and restoring local defect of film.

OKIKAWA Y, ISHIHARA M, OMURA H, HASEGAWA M

Thin planar heater e.g. surface heater, for use in light control and color conversion device for light proof curtain of window, has graphene film positioned on transparent base materials, where electrodes are arranged at ends of film.

OKIKAWA Y, YAMADA T, ISHIHARA M, HASEGAWA M

Wiring structure used for semiconductor device e.g. large scale integration, comprises carbon nanotubes and graphene, which are connected electrically through metal block.

SATO S, KONDO D, SATO M, NIHEI M, KONDO T

Graphene structure used for transparent electrode, comprises substrate, base which is formed on top of substrate, and vertical graphene which grows from base and stands in vertical direction with respect to surface of substrate.

KAWABATA A

Graphene-carbon nanotube structure for refinement of wiring in semiconductor device, has substrate, base formed on substrate, vertical graphene which grows from base, and stands in vertical direction with respect to substrate surface.

KAWABATA A

Graphene transistor has gate structure portion which is formed by laminating insulating film and metal electrode on channel region of graphene that is formed on insulating film.

NAKAHARAI S, NAKABARAI S

Electronic apparatus e.g. transistor, has protective film consisting of transition metal oxide that is formed on graphene film which is formed on insulating substrate, and insulating layer formed on protective film with electrode.

YAMAGUCHI J