国家/地区 中国（28）
IPC部 C（24） H（3）
IPC大类 C01（20） C23（4） H01（3）
IPC小类 C01B（20） C23C（3）
IPC C01B031/04（20） C01B032/184（3） C23C016/26（3）
发明人 HUANG D（22） JIANG H（22） LI Z（22）
SHI H（22） ZHU P（22） GAO X（21）
ZHANG Y（21） SHAO L（8） ZHONG D（6）
YU J（4） ZHANG P（4） DU C（3）
CUI H（2）
公开年 2015（26） 2014（2）
申请年 2014（28）
专利权人 CHONGQING GRAPHENE TECH CO LTD（28）

Method for reducing square resistance of graphene film used in display device, involves transferring graphene film to substrate, contacting with reagent containing stable dopant containing fused ring, forming overlapped structure.

GAO X, JIANG H, LI Z, SHI H, ZHANG Y, ZHU P, HUANG D

Preparation of bilayer continuous graphene thin film coiled material, includes connecting graphene with copper foil sheet, coating flexible target carrier with light curing adhesive, merging with continuous copper foil sheet, and pressing.

GAO X, JIANG H, LI Z, ZHANG Y, ZHU P, HUANG D

Protecting doped graphene comprises dispersing conductive polymer monomer and matrix composition on the surface of the graphene layer, and placing graphene layer in the oxidizer acidic solution so as to grow conductive polymer film.

GAO X, JIANG H, LI Z, SHI H, ZHANG Y, ZHU P, HUANG D

Doping of stabilized graphene thin film involves growing graphene on copper foil, etching copper foil, doping graphene surface with doping solution, and providing graphene sample with another temporary substrate/graphene layer sample.

GAO X, JIANG H, LI Z, SHI H, ZHANG Y, ZHU P, HUANG D

Doping stable graphene comprises wrapping doping reagent between graphenes, and wrapping graphene between substrates.

GAO X, JIANG H, LI Z, SHI H, ZHANG Y, ZHU P, HUANG D

Preparation of graphene thin film coiled material, involves peeling flexible web material after formation of target carrier roll, and obtaining primary coil product after processing continuous monolayer graphene roll film.

GAO X, JIANG H, LI Z, ZHANG Y, ZHU P, HUANG D

Transfer of graphene oxide doping by coating growth surface with polymer doped graphene transfer medium, attaching into target substrate, forming composite structure, vacuum pressure processing, heating and separating growth substrate.

GAO X, DU C, JIANG H, LI Z, SHI H, ZHANG Y, ZHU P, HUANG D

Preparation of stable doped graphene comprises taking substrate/graphite/copper foil sheet and doping liquid, etching and doping, and soaking in water.

GAO X, JIANG H, LI Z, SHI H, ZHANG Y, ZHU P, HUANG D

Atmospheric pressure chemical vapor deposition of graphene to form graphene film, involves cleaning copper foil substrate, annealing, forming graphene crystal domains on substrate, nucleating, melting to form graphene film, and cooling.

GAO X, DU C, JIANG H, LI Z, SHI H, ZHANG Y, ZHU P, HUANG D

Preparation of graphene thin film coiled material, involves growing graphene sheets comprising copper foil, forming sheet comprising target carrier layers, graphene layers, and copper layer, peeling primary product, and processing.

GAO X, JIANG H, LI Z, ZHANG Y, ZHU P, HUANG D