国家/地区 韩国（589） 世界知识产权组织（2）
IPC部 C（586） H（26）
IPC大类 C01（586） H01（26）
IPC小类 C01B（586） H01L（26）
IPC C01B031/04（586） H01L041/22（20） H01L041/18（19）
H01L041/08（8） H01L041/02（5） H01L041/047（5）
H01L041/187（5） H01L041/25（4） H01L041/04（3）
H01L041/253（3） H01L041/29（2）
发明人 LEE Y T（589）
公开年 2016（586） 2015（2）
申请年 2015（589）
专利权人 LEE Y T（589）

Graphene bending transistor for use in graphene bending circuit wafers, has drain electrode for controlling height of Fermi level of graphene and On/Off electric power, and insulating material layer equipped in lower part of graphene.

LEE Y T

Transistor useful as graphene single-electron transistor and electron tunneling graphene transistor for on/off electricity of electronic device i.e. central processing unit and memory, comprises e.g. a source electrode and a drain electrode.

LEE Y T

Transistor useful as graphene single-electron transistor and electron tunneling graphene transistor for on/off electricity of electronic device i.e. central processing unit and memory, comprises e.g. a source electrode and a drain electrode.

LEE Y T

Transistor for controlling on/off of electricity, comprises source electrode, drain electrode, and graphene connected to source electrode.

LEE Y T

Electron tunneling graphene transistor has crossed obstacle regulating circuit that is equipped with lower portion of piezo material.

LEE Y T

Transistor has crossed obstacle regulating circuit that is equipped in lower portion of Piezo material, and drain electrode to control height of Fermi level of graphene so that on/off of electricity is controlled.

LEE Y T

Manufacturing graphene atomic layer used for manufacturing electronic component, involves etching graphene and irradiating graphene with energy source, where graphene is equipped with one or more layers.

LEE Y T

Producing graphene atomic layer etched graphene, comprises providing self-assembled monolayer mask on surface the graphene having at least one layer, and irradiating energy sources on the graphene for etching.

LEE Y T

Manufacture of graphene used for manufacturing electronic component, involves providing self-assembled monolayer mask on graphene atomic layer, and etching graphene atomic layer by irradiating energy source.

LEE Y T

Transistor useful as graphene single-electron transistor and graphene electron tunneling transistor to adjust on/off electricity in central processing unit, memory and battery, comprises e.g. source electrode, drain electrode and graphene.

LEE Y T