国家/地区 日本（10）
IPC部 C（10）
IPC大类 C23（10）
IPC小类 C01B（9） C23C（9） H01L（6）
H01B（3） B05D（2） B82Y（2）
C23F（2） C25D（2） H01G（2）
H05H（2）
IPC C23C016/26（8） C01B031/04（7） C01B032/182（7）
C01B032/186（4） C01B032/194（4） C01B031/02（3）
C01B032/15（3） C01B032/18（3） C01B032/184（3）
H01B013/00（3） H01L029/16（3） B05D005/12（2）
B05D007/00（2） B82Y040/00（2） C01B032/19（2）
发明人 JANG B Z（2） ZHAMU A（2）
公开年 2015（5） 2017（3） 2016（2）
申请年 2015（10）
专利权人 JANG B Z（2） NANOTEK INST.（2） ZHAMU A（2）

Producing highly conducting film of highly oriented conductor-bonded graphene sheets, useful in thermal management device, comprises e.g. preparing graphene dispersion having discrete graphene sheets dispersed in fluid medium.

ZHAMU A, JANG B Z

Method for manufacturing graphene film used in electronic device, involves blowing source gas containing carbon-type gas from nozzle on surface of base material, and carrying out forced diffusion of radical.

SAKAKIDA H, KIM J H

Production of integrated layer of highly oriented halogenated graphene sheets or molecules used as dielectric material component for microelectronic devices involves preparing graphene oxide dispersion or gel having graphene oxide sheets.

ZHAMU A, JANG B Z, ZHAMUARUNA

Method for transferring high-quality chemical vapor deposition-grown monolayers of graphene from copper formation substrates to target substrates, involves transferring graphene layer formed on formation substrate to target substrate.

JOHNSON B Y, MAZUMDER P, SONI K K

Forming method of base film for graphene, involves heating substrate to temperature at which impurities are eliminated as gas, and heating substrate to temperature at which crystal grains of metal are grown in metal film.

NISHIDE D, MATSUMOTO T, KAGAYA M, IFUKU R

Method of manufacturing graphene layer on substrate, involves laminating metalized graphene layer to second substrate.

LIPOMI D J, ZARETSKI A, LIPOMI D

Apparatus for plasma synthesis of graphitic products including graphene, passes cracked carbon-containing species into reaction chamber, and recombining cracked carbon-containing species within afterglow.

PENNINGTON D A, CLAYTON A R, JUDA K L, PAUKNER C, KURZEPA L, COOPER R H S J, KOZIOL K K, JOAUG J Y, ST JOHN COOPER R H, ST JOHN C R H

Method for forming workpiece of e.g. electronic device, involves removing layer of material on top of graphene surface in predetermined pattern, and releasing graphene from catalytic film such that graphene is in form of patterned layer.

JOHNSON A T, GUDIBANDE R R, QI Z J, JOHNSON A, GUDIBANDE R, QI Z

Method for manufacturing transparent conductor in electric devices, involves removing copper support by bringing support into contact with non-acidic copper-etching solution after forming transparent resin layer to expose graphene film.

NAITO K, AKASAKA Y, YANG T, YOSHINAGA N, YANG T Y, AKITA M

Making graphene used as an impenetrable gas barrier, comprises providing seed gas in presence of metallic substrate, providing pulsed, ultraviolet laser beam and moving substrate or laser beam relative to other.

CASTRO A H, OZYILMAZ B, STIER A V, TOH C T, DU Z, CASTRO N A H