国家/地区 中国（15） 美国（13） 韩国（7） 日本（4） 台湾（4） 世界知识产权组织（4） 欧洲专利局（EPO）（2）
IPC部 C（28）
IPC大类 C23（28）
IPC小类 C23C（28） C01B（11） H01L（9）
C30B（4） H01M（4） B01J（3）
B82Y（3） B32B（2） C03C（2）
C25D（2）
IPC C23C016/02（28）
发明人 CHEN C（2） CHEN Z（2） HE D（2）
HE J（2） LEE S（2） LEE S J（2）
WANG X（2） WANG Y（2） XIAO D（2）
公开年 2017（14） 2016（11） 2018（3）
申请年 2016（28）
专利权人 SAMSUNG ELEC.（2） SHANGHAI INS.（2） ZING SEMICON.（2）

Protective layer for use in display screen, has layer main body provided with sapphire substrate, where graphene film is coated on sapphire substrate.

XIAO D

Manufacture of graphene barrier film for e.g. electronic device, involves forming graphene precursor layer on catalyst layer, forming graphene layer and protective layer, removing catalyst layer and providing graphene layer to substrate.

KIM M J, SEO T H, LEE S, KIM S M, AHN S, BAE S, SON D I

Graphene growth method used for increasing the nucleation density of graphene, involves providing germanium substrate, performing ion implantation on germanium substrate, annealing, providing carbon source and growing.

DI Z, MA J, ZHANG M, WANG G, JIA P, WANG Z, WANG X

Producing copper foil useful in heat dissipating member and cathode current collector to control graphene layer thickness, comprises e.g. forming copper layer, forming nickel layer on copper layer, forming graphene on nickel layer.

OH C, RYU J H, PARK J I

Method for manufacturing graphene field-effect transistor, involves forming graphene layer on surface of glass substrate, and forming high dielectric constant material layer on surface of graphene layer.

XIAO D

Controlled disulfide preparation method used for graphene in electronic devices involves atmospheric pressure chemical vapor deposition of tungsten disulfide on silicon dioxide/silicon substrate.

GONG Z, HE D, HE J, WANG Y

Growing of graphene with unbonded metal, involves depositing oxide on one surface of metal foil, defining other surface as metal surface, and stacking or rolling up metal foil on oxide surface towards metal surface.

YU G, ZHANG Y, SUI Y, CHEN Z, DENG R, GE X, LIANG Y, HU S

Preparing graphene coating on stainless steel surface involves preparing polishing metallographic sandpaper, polishing stainless steel following by acetone, ethanol, and deionized water, and ultrasonic cleaning.

QI J, LIU Y, LIN J, GU H, FEI W, FENG J

Interconnecting carbon nanotube device of graphene/metal composite electrode involves preparing carbon nanotube device, annealing at high temperature, and decomposing carbon source gas molecules into carbon atoms or dissolving in electrode.

CHEN C, GAO J, WANG Y, ZHOU W, ZHU Y

Method for preparing graphene by chemical vapour deposition (CVD), involves depositing graphene on insulating or semiconducting inorganic substrate bringing gaseous oxidant and carbon-containing precursor into contact with substrate.

TOMOVIC Z, WEBER N, BINDER A, WAGNER N