国家/地区 中国（20）
IPC部 C（21）
IPC大类 C23（21）
IPC小类 C23C（21）
IPC C23C014/18（21）
发明人 CHANG K（2） CHEN K（2） LI Z（2）
WANG H（2） WU G（2）
公开年 2021（12） 2022（7） 2023（2）
申请年 2021（21）
专利权人 UNIV HENAN（2） UNIV PEKING（2）

Preparing single crystal graphene/two-dimensional cuprous telluride heterojunction surface-enhanced Raman spectroscopy substrate useful in surface-enhanced Raman spectroscopy, comprises etching copper film on single-crystal graphene, heating in tellurium source and molecular sieve and reacting.

CHANG K, HUANG M, WANG H, CHEN K

Preparing a metal wafer substrate involves forming metal thin film on the sapphire substrate by magnetron sputtering, and annealing under mixed atmosphere of hydrogen and argon.

PENG H, YANG Y, CAO Y, TANG J, YAN R, DU Y

Diode for semiconductors, has heterojunction device with vertical structure, which is indium tin oxide substrate, gallium oxide film, graphene film and aluminum electrode layer, from bottom to top.

XIANG J, JIA M, HAN T, TANG L

Growing of nitride on diamond for e.g. consumer electronics, involves preparing group of diamond single crystal substrates, group(s) of diamond polycrystalline polishing substrates and material of gallium nitride/graphene/diamond.

LIANG Z, WANG Q, WANG X

System useful for measuring mechanical movements in biological sample, comprises chamber, composite film structure comprising metallic layer and polymer layer, electrical connections and central opening configured to receive biological sample.

MERCOLA M, MOLOKANOVA E, SAVTCHENKO A, LIPOMI D J, ZARETSKI A

Preparing graphene by relatively closed area solid-phase process, comprises successively or simultaneously depositing carbon source layer and catalytic metal layer on surface of clean substrate to obtain graphene preparation precursor, and heat annealing in oxygen-free or low-oxygen environment.

DUAN J, DENG L, LV T, WU H, ZHANG W, XIONG W

Graphene-based silver electrical contact material comprises graphene, and additive including gold, silver, copper, titanium, cadmium oxide, tin(IV) oxide, zinc oxide, nickel, zirconium, tungsten, molybdenum, vanadium, niobium, tantalum, rare earth metals, and/or graphite.

QI J, QI Y, YE H

Composite structure heat conducting plate for use in electronic chip industry, has m metal layers and n graphite layers, where m metal layers and n graphite layers are alternately arranged and assembled by vacuum diffusion bonding process.

HU T, NIU T, GUO S, CHEN X

Preparing one-dimensional single crystal germanium-based graphene plasmon nanostructure in e.g. mid-infrared sensing, comprises sputtering gold nano-film on substrate, and growing high crystallinity graphene shell layer on surface of germanium doped single crystal nano-wire.

WANG H, GU Y, CHANG K, CHEN K

Composite copper foil structure used for copper-clad laminate and printed circuit board, has shell layer comprising N-layer graphene layer and M-layer metal copper layer alternately laminated with each other, and where surface of shell layer close to copper foil core layer is graphene layer.

GAO F, CAI L, ZHANG Q