国家/地区 中国（8） 美国（7） 日本（5） 韩国（5） 世界知识产权组织（4） 加拿大（2） 英国（2） 台湾（2）
IPC部 C（25）
IPC大类 C01（25）
IPC小类 C01B（25）
IPC C01B032/186（11） C30B029/02（10） C30B025/18（8）
C01B032/194（6） C01B032/198（6） C01B032/184（5）
C23C016/26（4） C30B029/64（4） H01L021/02（4）
C23C016/02（3） C30B025/10（3） C30B033/04（3）
B82Y030/00（2） B82Y040/00（2） C01B032/05（2）
发明人 DIXON S（2） GUINEY I（2） KONDO O（2）
LIU J（2） THOMAS S（2） ZHANG S（2）
公开年 2022（12） 2021（10） 2023（3）
申请年 2021（25）
专利权人 FUJITSU LTD（2） PARAGRAF LTD（2） UNIV SUNGKYU.（2）

Growing graphene layer structure on substrate used in opto-electronic device, e.g., solar cell, solar cell, light-emitting diode, organic light-emitting diode, electro-optic modulator, photodetector or diode, involves providing substrate on susceptor in chemical vapor deposition reaction chamber.

THOMAS S, GUINEY I, DIXON S

Producing multilayer graphene, involves synthesizing multilayer graphene from carbon source using iron-chromium alloy film as catalyst.

HAYASHI K, KONDO O

Electrical connection component for e.g. electric contact, comprises base material and nanocarbon material film composed of graphene laminated material formed by laminating two layers of graphene single layer materials.

KITANO A, SHIMIZU T, KUBO T

Growing graphene nanoribbon involves depositing aromatic molecular seeds from gas phase onto surface of growth substrate, and growing graphene nanoribbon from aromatic molecular seeds via chemical vapor deposition, where growth substrate is germanium substrate.

JACOBBERGER R M, WAY A J, ARNOLD M S

Hydroxide radical generating system comprises up conversion layer including first up-conversion layer and second up-conversion layer, photocatalyst layer, and photonic crystal layer.

KIMHYEONGIL, IN J H

Preparing composite dimension carbon atom framework van der Waals homogeneous structure temperature control physical defogging film comprises e.g. preparing powder-shaped carbon nanotube material, spraying cellulose acetate by connecting cellulose acetate solution and obtaining defogging film.

JIANG X, DONG H, TIAN B

Graphene element used as field effect transistor having top gate structure, comprises boron nitride layer having turbostratic structure, and graphene layer in contact with boron nitride layer.

KONDO O

Metal catalyst layer used for producing graphene, laminated and crystallized on c-plane of substrate having corundum structure, having face-centered cubic structure.

NARUTSUKA S, NAKAJIMA R

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Producing transition metal chalcogen compound useful in semiconductor devices comprises forming graphene thin film, forming transition metal chalcogen compound on graphene thin film from transition metal precursor and chalcogen precursor.

HOON L S, HONG B H, KIM J W, CHO S P, BAEKWON P, LEE G S, IL J, LIM E H