国家/地区 中国（11） 韩国（2）
IPC部 C（14） H（6） B（2）
IPC大类 C30（14） C23（6） H01（6）
C01（3）
IPC小类 C30B（14）
IPC C30B025/18（14）
发明人 FENG H（3） TANG J（3） WANG Y（3）
CHEN X（2） LI X（2） PAN Y（2）
SHAO C（2） XU P（2） XU X（2）
ZHANG J（2）
公开年 2022（14）
申请年 2021（14）
专利权人 CEC COMPOUND.（2） UNIV SHANDON.（2）

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Producing transition metal chalcogen compound useful in semiconductor devices comprises forming graphene thin film, forming transition metal chalcogen compound on graphene thin film from transition metal precursor and chalcogen precursor.

HOON L S, HONG B H, KIM J W, CHO S P, BAEKWON P, LEE G S, IL J, LIM E H

Preparation method of a large domain graphene single crystal, involves annealing sapphire/metal substrate with oxygen-containing gas and providing growth gas according to mode of increasing proportion gradient of growth gas, and growing on sapphire/metal substrate to obtain graphene single crystal.

LIU Z, PENG H, CAO Y, WANG Y, DU Y, TANG J, YAN R

Method for remote epitaxial growth of nitride single crystal thin film based on ferroelectric material substrate comprising adjusting temperature of ferroelectric material substrate, and cooling ferroelectric material substrate.

XU K, WANG J, WANG Y, XU Y, QU Y

Preparation of gallium nitride epitaxial structure by providing a silicon carbide substrate, pre-processing, growing a graphene film, growing diamond film, growing aluminum nitride polycrystalline film, and annealing.

PAN Y, FENG H, TANG J

Preparing epitaxial structure for gallium nitride-based radio frequency device, comprises e.g. performing surface cleaning treatment, annealing the silicon carbide substrate to produce graphene film, growing indium-galliun-nitride-aluminum-gallium-nitride barrier layer.

PAN Y, FENG H, TANG J

Preparing near free state single-layer graphene based on silicon carbide single crystal substrate comprises e.g. pre-processing surface of silicon carbide single crystal substrate wafer, heating pre-processed substrate silicon surface, performing hydrogen etching, and obtaining substrate.

XU X, XIE X, XIAO L, SHAO C, LI X, CHEN X, ZHANG F

Preparation of ultrathin beta-radiation source for micro-components, involves using polymethyl methacrylate/graphene film and platinum sheet, and depositing beta-radiation source on graphene using solution of e.g. beta-radiation source.

ZHANG J, LI C, WANG X, XU P, FENG H, CHEN Z, YANG Y, WU W, ZHOU C, LUO T

Epitaxially growing uniform graphene more than six inches on silicon carbide substrate, comprises grinding, polishing, and cleaning silicon surface of silicon carbide wafer, vacuumizing high-temperature furnace chamber, heating, feeding argon gas and naturally cooling to room temperature.

GUO F, LI X, XU X, SHAO C, CHEN X

Preparing indium-phosphate thin film based on gallium-arsenic substrate, comprises e.g. growing gallium-arsenic buffer layer on gallium-arsenic substrate, preparing composite buffer layer on gallium-arsenic buffer layer, forming composite buffer layer and growing indium-phosphate thin film.

JI H, LUO S, WANG Y, XU P