国家/地区 韩国（14）
IPC部 C（14）
IPC大类 C23（14）
IPC小类 C23C（14） H01L（9） C01B（7）
H01M（3）
IPC C23C016/26（9） H01L021/02（6） C01B032/186（5）
H01L021/285（5） H01L021/768（5） C23C016/02（3）
H01L023/532（3） C23C016/44（2） C23C016/455（2）
C23C016/458（2） C23C016/511（2） C23C016/56（2）
H01L021/314（2） H01L021/3205（2） H01L021/687（2）
发明人 LEE C S（4） BYUN K（3） BYUN K E（3）
LEE C（3） AHN S J（2） AN S（2）
IFUKU R（2） KIM D W（2） KIM K（2）
KIM Y（2） LEE J（2） MATSUMOTO T（2）
OH S（2） OH S R（2） SHIN K（2）
公开年 2023（14）
申请年 2022（14）
专利权人 SAMSUNG ELEC.（7） TOKYO ELECTR.（2）

Method for manufacturing surface-patterned current collector, comprises etching and patterning current collector and coating carbon material on patterned current collector, where patterning by etching comprises electrochemical etching.

JIN A, SUNG G W

Anode active material comprises carbon material, and silicon structure attached to carbon material, where silicon structure includes silicon nanoparticle, metal thin film formed on surface of silicon nanoparticle, and graphene coated on surface of metal thin film.

KIM Y H, SON M W, KIM Y, SUN M

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

Chuck assembly used in semiconductor device fabrication system, comprises chuck base includes lower base and upper base that is on lower base, ceramic plate on upper base, and isolator ring enclosing outer sidewall of lower base.

JUNG U, SHIN M, SUNG D, NA D, KIM D, KIM K, JEONG S, JUNG S H, KIMKYUNGSUN, KIM D W, SUNG D Y, SU S M, JUNGUNGYO

Metal particles used in adhesive paste or solder paste for composite bonding structure for semiconductor device, comprises core including metal and shell on surface of core, where shell comprises metal and nanoparticles.

CHU K, LEE J, JUNGHOON L, CHU K M

Graphene interconnect structure useful for electronic device comprises first oxide dielectric layer including porous silicon oxide, or amorphous boron nitride, second oxide dielectric layer including aluminum oxide and graphene layer.

KIM C, BYUN K E, SHIN K W, LEE C S, BAEKWON P, PARK B, LEE C, SHIN K, BYUN K

Manufacturing electrostatic self-assembled silicon/reduced graphene oxide (rGO)/carbon nanofibers composite as anode materials for lithium-ion battery, involves obtaining silicon (Si)-(3-aminopropyl)triethoxysilane (APTES) solution by adding predetermined silicon nanoparticles to piranha solution.

CONG R, LEE C S, LEECHANGSUP, FEMALE T

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N

Substrate processing apparatus for manufacturing semiconductor device, comprises substrate support to support multiple substrates such that substrates are on substrate support, chamber sidewall surrounding side surface of substrate support, and upper plate having plate portions on substrate support.

OH S, AN S, LEE J, JEONG G, JUNG K O, LEE J H, AHN S J, OH S R

Processing substrate involves carrying substrate having silicon-containing film on surface of substrate into processing container, forming adsorption layer, forming silicon oxide layer, and forming graphene film on silicon oxide layer by supplying carbon-containing gas into processing container.

FURUYA H, YAMADA H, IFUKU R, MATSUMOTO T, WADA M, HARUHIKO F A