国家/地区 中国（37）
IPC部 H（37） C（7） B（4）
G（3）
IPC大类 H01（37） B82（3） C09（3）
C30（3） C23（2）
IPC小类 H01L（37）
IPC H01L031/0224（5） H01L033/00（5） H01L021/336（4）
H01L023/367（4） C30B029/40（3） H01L029/16（3）
H01L029/423（3） H01L029/51（3） H01L029/778（3）
H01L031/18（3） H01L033/06（3） H01L033/32（3）
B82Y010/00（2） B82Y040/00（2） C30B025/18（2）
发明人 LIU C（4） LIU Y（4） LIU L（3）
WANG J（3） WANG X（3） WANG Y（3）
ZHANG L（3） CHEN Y（2） HU J（2）
JIANG H（2） JIN C（2） LI R（2）
LIU K（2） LIU X（2） MA L（2）
公开年 2023（37）
申请年 2023（37）
专利权人 CHINESE ACAD.（2） JIANGXI MTC .（2） UNIV PEKING（2） UNIV TIANJIN（2）

Method for preparing carbonaceous insulating layer of electron beam induced photoresist growth, involves utilizing organic solution to clean substrate by electron beam and wash photoresist solid film, and forming carbonaceous insulating layer after leaving electron beam irradiation under substrate.

HAO L, LI R, YU K, TIAN H, MA L

High electron mobility transistor in semiconductor device, has conductive graphene layer disposed between gate metal and first semiconductor structure, and disposed opposite to gate metal, and/or disposed between second semiconductor structure and second semiconductor layer.

YE N, LIU C, ZHANG H, XU H, YAN D, CHEN D

Ultra-low leakage low-capacitance transient suppression device for preventing over-damage sensitive electronic element i.e. transient suppression diode TVS, has sliding block whose bottom end is fixedly connected with suction disk.

WANG L

Method for extending graphene on substrate, involves depositing oxide film on substrate to obtain composite substrate, and performing single crystalline membrane removing process to obtain composite substrate structure.

GUO R, HE J, SHI C, YANG B, YU A

Preparing full two-dimensional short channel field-effect transistor in large-scale comprises e.g. covering spin-coat photoresist to surface of local dielectric layer, and evaporating metal electrode to form contact electrode on source.

YU D, LOU H, CAO Z, LIAO Z

Multi-wavelength surface plasmon thermo-electron photo diode detector, has vanadium dioxide micro-nano structure, graphene layer and top drive electrode that are connected together, and two sides of two-dimensional material layer provided with metal source electrode and metal drain electrode.

WEN C, WANG G, JIANG H, WU J

Ferroelectric field effect transistor gas sensor, comprises gate on substrate, and pulse gate voltage applied to gate to regulate polarization direction and strength of ferroelectric dielectric layer, thus realizing regulation of initial state of gas sensitive layer and gas desorption speed.

WANG Y, LIU Y, GUAN K, FENG S, WANG X, LIU L, ZHANG T

Reducing damage to substrate when using plasma-enhanced atomic layer deposition to grow thin film involves depositing oxide film on cleaned substrate using water/ozone source and metal source, and depositing nitride film using plasma source.

HU Y, ZHU X, TIAN F, YANG J, LIU H, QIU P, WEI H, ZHENG X, QIU H

Fan-out type packaging structure for packaging electronic components in system level for portable electronic product i.e. notebook computer, has third chip group that is set on second solder layer, and electrically connected with second wiring layer through second solder layer.

CHEN Y, ZHU W

Gallium oxide X-ray synaptic device for use in medical health field, has patterned electrode set on surface of gallium oxide light absorbing layer for collecting photo-generated carrier and outputting electric signal.

LONG S, ZHANG Z, YU S, LIU Y, HOU X