国家/地区 中国（14）
IPC部 C（9） H（6） B（2）
IPC大类 C01（6） H01（6） C30（3）
IPC小类 C01B（6） H01L（5） C30B（3）
IPC C01B031/04（5） C30B023/02（3） C01B032/184（2）
C30B029/02（2） H01L031/0352（2）
发明人 CHEN X（14）
公开年 2016（5） 2013（2）
申请年 2014（4）  2015（3）  2009（2）  2011（2） 
专利权人 CHINESE ACAD SCI PHYSICS INST（14）

Composite seed crystal useful for aluminum nitride single crystal growth comprises aluminum nitride ceramic substrate, graphene thin layer on aluminum nitride ceramic substrate and aluminum nitride thin film on graphene thin layer.

GUO L, HU W, WANG W, CHEN X

Photovoltaic device in micro-nano device, has graphene layer whose one portion is located in opening of low semiconductor substrate and other portion on insulating layer and electrode is located on insulating layer and graphene layer.

GUO L, YANG J, CHEN X

Light source irradiate photovoltaic device, has electrode located on gain semiconductor substrate that is formed with graphene layer, where light energy of light source is greater than band gap of high blocking gain semiconductor substrate.

GUO L, CHEN X

Crucible for growing graphene on silicon carbide sheet, comprises cylindrical crucible body and crucible cap on cylindrical crucible body.

LU W, GUO L, CHEN X

UV detector of graphene coated silicon carbide nano wire, has silicon oxide/silicon substrate that includes graphene layer whose both ends are arranged with electrodes, and whose back side is arranged with back gate electrode.

CHEN X, GUO L, JIA Y

Wavelength tunable UV detector has support substrate that is arranged with aluminum gallium nitride layer and graphene layer whose ends are arranged with electrodes on which electrode leads are arranged via bonding.

CHEN X, GUO L, WANG W, ZHAO M

Epitaxial growth of graphene junction on semi-insulating silicon carbide wafer surface for e.g. multipolar device, involves cleaning semi-insulating silicon carbide wafer surface, implanting boron ion on wafer and annealing wafer.

CHEN X, GUO L, JIA Y, WANG Y

Growing P-type graphene comprises, at nitrogen-containing atmosphere, annealing silicon carbide substrate, and thermal decomposing.

CHEN X, GUO L, JIA Y, LU W, GUO Y

Preparation of boron-doped graphene involves using boron-doped silicon carbide prepared by thermal decomposition method at high temperature.

CHEN L, CHEN X, GUO L, GUO Y, JIA Y, LI Z, LU W, WANG G, WANG W

Silicon carbide ohmic electrode structure, has silicon carbide substrate made of silicon carbide single crystal or silicon carbide epitaxial layer, and graphene layer forming single layer or multi-layer structure.

CHEN X, GUO L, LIU C