国家/地区 中国（25） 世界知识产权组织（8） 美国（4）
IPC部 C（15） H（9） B（5）
G（2）
IPC大类 C01（13） H01（9） C23（7）
B82（4） C30（3） C25（2）
G01（2）
IPC小类 C01B（13） H01L（9） C23C（7）
B82Y（4） C30B（3） G01N（2）
IPC C01B031/04（12） C23C016/26（6） B82Y040/00（4）
C23C016/02（3） H01L021/02（3） H01L021/336（3）
B82Y030/00（2） C01B031/02（2） H01L021/265（2）
H01L021/28（2） H01L029/51（2） H01L029/78（2）
发明人 XIE X（17） DING G（15） JIANG M（10）
DI Z（7） WANG G（5） ZHANG M（5）
CHEN D（3） LI X（3） SUN J（3）
TANG S（3） WANG H（3） ZHANG Y（3）
ZHU Y（3） CHEN J（2） GONG Q（2）
公开年 2012（12） 2013（11） 2011（2）
申请年 2012（16）  2011（5）  2013（4） 
专利权人 CHINESE ACAD SCI SHANGHAI MICROSYSTEM（25）

Preparation of graphene powder involves putting graphite to dispersing medium containing oxidizing agent and solution of intercalation agent, uniformly stirring while continuously filling helium gas, and allowing contact of components.

DING G, JIANG M, LI X, SUN J, XIE X, XU C, XU X

Method for controlling stability of ion based on energy of ion implantation for preparing graphene, involves annealing catalytic substrate to carbon ion implantation, so as to form graphene thin film layer on catalyst substrate surface.

CHEN D, DI Z, DING G, GUO Q, WANG G, XIE X, YE L, ZHANG M

Preparation of graphene nanopore array involves coating carbon solution on surface of porous anodic aluminum oxide template, pressing porous anodic aluminum oxide template on substrate surface, peeling template, and annealing metal base.

DING G, JIANG M, XIE X

Controllable industrial graphene metal nano-meter structure array preparation method, involves forming platform frame with groove, and reducing temperature of segregation carbon metal solid solution for complete graphene preparation process.

CHEN L, DI Z, WANG G, WANG X, WEI X, ZHANG M

Graphene modulated high-k metal gate germanium-based MOS device manufacturing method, involves forming graphene thin film on Germanium-based substrate, and forming high-k gate dielectric on surface metal electrode.

DI Z, WANG G, WANG X, ZHANG M, ZHENG X

Method for preparing liquid grid-type graphene FET, involves depositing aluminum layer on silicon substrate, and spin-coating polyimide photoresist on aluminum layer as substrate of flexible FET.

CHENG J, JIN Q, WU L

Rapid thermal processing method for preparing graphene powder in air atmosphere comprises putting precursor of graphene in non-sealing cover crucible, then carrying out heat treatment to obtain graphene powder.

DING G, JIANG M, LI X, SUN J, XIE X

Graphene preparation involves adding halobenzene in organic solvent in presence of catalyst to form graphene suspension, filtering suspension to obtain graphene oxide and catalyst, adding graphene oxide with acid, and filtering.

DING G, JIANG M, LI X, SUN J, WU T, XIE X

Graphene field effect device preparing method, involves forming source electrode and drain electrode in graphene field effect device structure, and connecting source electrode and drain electrode with graphene.

KANG X, LIU X, SUN Q, WANG H, XIE H, XIE X

Preparation of graphene involves providing semiconductor substrate, heating under hydrogen and inert atmosphere, adding carbon source to surface of substrate, by chemical vapor deposition method, and cooling.

CHEN D, DI Z, DING G, WANG G, XIE X, ZHANG M, ZHU Y