国家/地区 美国（10） 世界知识产权组织（8） 中国（6） 日本（2）
IPC部 C（8） H（7） B（5）
G（3）
IPC大类 H01（7） C01（6） B32（4）
B82（4） C23（4） B05（2）
C03（2） G01（2）
IPC小类 C01B（6） H01L（5） B32B（4）
C23C（4） B82Y（3） B05C（2）
B05D（2） G01N（2）
IPC C01B031/04（5） C23C016/26（4） B82Y030/00（3）
B82Y040/00（3） B05C003/20（2） B05D005/12（2）
B32B003/10（2） B32B009/04（2） C01B031/02（2）
C01B032/194（2） G01N021/84（2）
发明人 YAGER T A（10）
公开年 2012（4） 2013（2） 2014（2） 2016（2）
申请年 2010（2）  2011（2）  2012（2）  2013（2） 
专利权人 EMPIRE TECHNOLOGY DEV LLC（10）

Copper substrate for growing graphene monolayer has second copper layer in contact with first copper layer, and has second copper percentage, second oxygen percentage and second average thickness.

YAGER T A, ROBINSON J

System used to at least partially alter defect area in layer of graphene, on substrate, comprises chamber to receive layer including some graphene and defect areas in graphene, and container to e.g. react substrate to produce cationic area.

MILLER S A, YAGER T A

Labeling of defects in graphene layer for graphene film production involves providing substrate with surface partially covered by graphene layer and contacting substrate with indicator which selectively binds with areas exposed by defects.

YAGER T A, MILLER S A

Method for detecting defects in sample using saturable absorber e.g. graphene, involves comparing reflected intensity ratio to incident intensity ratio to identify defects at locations.

YAGER T A

Producing graphene used in graphene-copper composite, involves providing copper substrate including first copper layer in contact with second copper layer and growing graphene monolayer on second copper layer by chemical vapor deposition.

ROBINSON J, YAGER T A

Partially altering defect area in a layer on substrate involves reacting substrate under reaction conditions to produce cationic area in exposed areas; adhering graphene oxide to cationic area to produce graphene oxide layer; and reducing.

MILLER S, YAGER T, MILLER S A, YAGER T A

Graphene-based electronic apparatus e.g. capacitor, comprises primary electrode containing three-dimensional open-cell graphene structure formed by chemical vapor deposition on metal foam substrate.

YAGER T A

Method for transferring layer of graphene from transitional metal substrate onto target substrate, involves conforming layer of graphene to target substrate to form graphene on substrate assembly by applying hydrostatic pressure.

YAGER T A

Formation of structure, involves applying photoresist layer and graphene layer on substrate, and applying light through mask including pattern to graphene layer to form pattern on photoresist layer through graphene layer.

YAGER T A, MILLER S A

Forming recrystallized metal layer for growing graphene monolayer involves forming metal layer on substrate; forming layer of dielectric material on the metal layer; and directionally recrystallizing the metal layer.

YAGER T A