国家/地区 日本（8） 美国（3）
IPC部 H（8） C（4） B（3）
IPC大类 H01（8） C01（4） B82（2）
IPC小类 H01L（8） C01B（4） B82Y（2）
IPC H01L021/336（5） H01L029/786（5） C01B031/02（3）
H01L021/28（3） H01L021/3205（3） H01L021/768（3）
H01L023/532（3） H01L023/522（2） H01L029/06（2）
发明人 KONDO T（8）
公开年 2009（2） 2013（2）
申请年 2007（2）  2011（2） 
专利权人 FUJITSU LTD（8）

Photo detection element of optical sensor used in imaging device, has infrared light-receiving layer that includes graphene layers and spacer layers that are alternately stacked, where infrared light passes through spacer layers.

SATO S, NISHINO H, KONDO D, HAYASHI K, KONDO T

Semiconductor device used for field effect transistor, comprises ribbon-shaped catalyst layer formed on crystal substrate, layer containing ribbon-shaped boron nitride, for covering catalyst layer, and ribbon-shaped graphene.

KONDO T

Manufacturing method of graphene film, involves removing catalyst metal film in oxidation atmosphere of oxidizer and transferring graphene film to substrate.

KONDO D, NAKANO H, KONDO T, NAKANO M

Wiring structure used for semiconductor device e.g. large scale integration, comprises carbon nanotubes and graphene, which are connected electrically through metal block.

SATO S, KONDO D, SATO M, NIHEI M, KONDO T

Method for manufacturing semiconductor device for forming graphene on insulating film, involves forming catalyst metal film on substrate, where insulating film is formed on grapheme metal film.

KONDO T

Semiconductor device has graphene electrode, which is formed in two dimensional structure, where boron nitride semiconductor layer is coupled with graphene end of graphene electrode.

KONDO T, IWAI D

Manufacturing method of graphene sheet used for manufacturing of semiconductor device involves heating carbonized material layer at predetermined temperature.

KONDO T, SATO S

Package for mounting e.g. high power amplifier for mobile phone, has flexible carbon nanotube sheet that consists of graphene and carbon nanotube bundle on mounting surface of electronic device chip.

IWAI D, KONDO T