国家/地区 日本（7） 美国（4）
IPC部 H（7） C（5） B（2）
IPC大类 H01（7） C01（5）
IPC小类 H01L（7） C01B（5）
IPC C01B031/02（5） H01L029/786（5） H01L021/02（4）
H01L021/336（4） H01L023/532（4） H01L029/16（4）
H01L029/66（4） H01L051/05（4） H01L051/30（4）
H01L051/40（4） H01L021/28（3） H01L021/3205（3）
H01L021/768（3） H01L029/778（3） C01B031/04（2）
发明人 SATO S（3） KONDO D（2） OFUCHI M（2）
SATO M（2）
公开年 2015（8）
申请年 2013（3）  2014（2）  2015（2） 
专利权人 FUJITSU LTD（8）

Electronic device e.g. tunnel transistor, comprises channel layer comprising graphene(s) with edge portions terminated with modifying groups different from each other bonded to each other, and electrodes formed on channel layer.

SATO S, JIPPO H, OHFUCHI M, OFUCHI M

Semiconductor device manufacturing method, involves forming catalyze membrane on insulator, forming graphene layer with electric conduction film, matching conduction film with insulator, and performing graphene layer thin changing process.

KONDO D, SATO S

Manufacturing method of graphene film, involves removing catalyst metal film in oxidation atmosphere of oxidizer and transferring graphene film to substrate.

KONDO D, NAKANO H, KONDO T, NAKANO M

Graphene film in which many ribbon-shaped graphenes having a longitudinal edge structure of an arm chair type constitute a network structure used for manufacturing electronic device and top gate top contact thin film transistor.

YAMAGUCHI J, SATO S

Manufacture of graphene film used for e.g. next-generation transistor, involves transferring graphene film with supporting film to graphene film on another substrate, and transferring laminated graphene films to another substrate.

HAYASHI K

Carbon electrically conductive structure used in semiconductor device e.g. semiconductor memory, has first graphene whose edge is electrically connected with edge of second graphene.

SATO M

Manufacturing method of wiring structure for metal oxide semiconductor transistor of e.g. semiconductor memory used in electronic device, involves moving portion on catalyst material and film so as to remain graphene only in groove.

SATO M

Semiconductor device for use as field effect transistor, comprises graphene bilayers, which does not contain the doped impurities, multilayer carbon nanotubes, semiconductor elements and electrodes.

OFUCHI M