国家/地区 世界知识产权组织（13）
IPC部 H（10） C（9） B（7）
IPC大类 C01（9） H01（9） B82（5）
IPC小类 C01B（9） H01L（9） B82Y（5）
IPC C01B031/02（8） H01L029/16（7） H01L029/06（6）
H01L029/786（6） C01B031/04（5） H01L021/02（5）
H01L021/336（5） H01L029/66（5） H01L051/05（5）
H01L051/30（5） H01L029/778（4） B82Y030/00（3）
B82Y040/00（3） C01B032/182（3） H01L021/00（3）
发明人 SATO S（8） HAYASHI K（3） KONDO D（3）
YAMAGUCHI J（3） ASANO K（2） IWAI T（2）
公开年 2014（3） 2010（2） 2013（2）
申请年 2009（3）  2014（3）  2013（2） 
专利权人 FUJITSU LTD（13）

Majorana quantum bit for use in quantum computer, has first layer provided between first edge and first s-wave superconductor layer and for penetration of Cooper pairs from first superconductor layer to first edge by proximity effect.

OHTOMO M, KAWAGUCHI K

Gas sensor used for medical device, has graphene film which is provided in upper direction of semiconductor layer and contacts gas, and barrier film is positioned between semiconductor layer and graphene film.

HARADA N, SATO S, HAYASHI K, YAMAGUCHI J

Manufacture of graphene film used for e.g. next-generation transistor, involves transferring graphene film with supporting film to graphene film on another substrate, and transferring laminated graphene films to another substrate.

HAYASHI K

Electronic device e.g. graphene transistors, has nanocarbon material, electrodes connected to nanocarbon material, and lower layer and upper layer containing molecular material having doping function on nanocarbon material.

SATO S, YAMADA A, YAGI K, TAKAHASHI M

Graphene film for manufacture of electronic apparatus, comprises preset number of six-membered carbon rings which are linked and aligned in short direction, and edge structure along long direction which is completely of armchair-type.

YAMAGUCHI J, SATO S, YAMADA H, TANAKA K, YAMADA Y

Wiring structure used for semiconductor device e.g. large scale integration, comprises carbon nanotubes and graphene, which are connected electrically through metal block.

SATO S, KONDO D, SATO M, NIHEI M, KONDO T

Electronic apparatus e.g. transistor, has protective film consisting of transition metal oxide that is formed on graphene film which is formed on insulating substrate, and insulating layer formed on protective film with electrode.

YAMAGUCHI J

Manufacture of graphene nanomesh used for e.g. manufacturing semiconductor device, involves depositing several particles having carbon absorption property on graphene at predetermined temperature or more, heating and removing particles.

SATO S, IWAI T

Manufacture of semiconductor device e.g. field effect transistor used in mobile telephone base station, involves forming catalyst film on substrate, growing graphene on catalyst layer, forming gap and removing catalyst film.

HAYASHI K, SATO S

Manufacturing method of semiconductor device for, e.g. personal computer (PC), involves forming conductive film touching graphene layer on insulator.

KONDO D, SATO S