国家/地区 韩国（52） 美国（28） 世界知识产权组织（19） 中国（18） 日本（2）
IPC部 C（44） B（38） H（20）
G（9）
IPC大类 C01（42） H01（19） B82（18）
B01（17） C23（17） B32（10）
B41（8） B29（3） G01（3）
G06（3） H05（3） B05（2）
B44（2） C25（2） G03（2）
IPC小类 C01B（42） B01J（17） C23C（17）
B82Y（16） H01B（12） B32B（10）
H01L（8） B41M（7） B82B（5）
B29C（3） G01N（3） G06F（3）
B01D（2） B05D（2） B41F（2）
IPC C01B031/02（34） C01B031/04（20） B82Y040/00（13）
C23C016/26（11） H01B001/04（10） B82Y030/00（9）
B01J019/18（6） C01B032/186（6） B01J019/08（5）
B82B003/00（5） C23C016/46（5） C23C016/54（5）
B01J023/755（4） B32B038/10（4） B41M005/10（4）
发明人 YOON J H（22） WON D K（14） WON D（13）
NA D H（11） YOON J（10） SONG Y I（9）
CHO S（8） PARK C H（8） CHO S M（7）
SONG Y（7） YUAN D（7） NA D（6）
HONG B（5） HONG B H（5） KIM K S（5）
公开年 2012（13） 2015（12） 2014（11） 2013（5） 2016（5） 2011（4） 2017（4）
申请年 2012（15）  2011（12）  2014（10）  2013（8）  2015（3）  2016（3）  2017（2） 
专利权人 HANWHA TECHWIN CO LTD（54）

Graphene inspection apparatus for use in graphene check system, has data acquisition unit for acquiring heat distribution data of graphene, in which current is applied, where detection unit detects deformity occurrence of graphene.

KIM N Y, WON D K

Synthesis of graphene involves arranging substrate in inner space, supplying gas and irradiating light to inner space using auxiliary heating unit, which absorbs light emitted by main heating unit, and emits radiant heat toward substrate.

WON D, NAM W

Graphene-based laminate used in e.g. organic light emitting device, transistors, comprises substrate, graphene layer on substrate, and inorganic layer comprising fluorine-containing lithium compound, formed on graphene layer.

PARK C, CHO S, SEO S, SHIN S, PARK C H, CHO S M, SEO S A, SHIN S M

Preparing graphene-based thin-film laminate used in e.g. transistor, comprises conducting cycle having e.g. contacting surface of graphene onto substrate with non-metal precursor gas and activating surface of graphene with plasma N times.

PARK C, CHO S, SEO S, SHIN S, KIM T, KIM S, PIAO Z, SEO S A, SHEN Z, PARK C H, CHO S M, SHIN S M, KIM T K, KIM S Y

Chamber for synthesizing graphene at high-temperature/high-vacuum environment, has auxiliary heater placed between substrate and main heater and for heating auxiliary space between substrate and auxiliary heater for synthesizing graphene.

WON D, NAM W

Graphene manufacturing device has base material that is dipped in miscible fluid of etchant and from which metal substrate is removed by metal substrate removing unit and graphene layer is removed.

KWON Y D, KIM K S

Transfer of graphene used in e.g. transparent display, involves providing catalytic metal layer on graphene provided on carrier, removing carrier such that graphene is placed facing target substrate, and plasma processing.

PARK J S, YOON J H

Manufacturing graphene, comprises preparing support member, disposing carbon layer and catalyst layer, forming graphene, attaching carrier to graphene and forming graphene-forming structure, separating member and removing catalyst layer.

PARK C, CHO S, PARK C H, CHO S M

Graphene manufacturing device has driving unit which is connected to jig and contacted with transfer film of jig for rolling jig, and graphene layer that is placed in metal substrate.

KWON Y D, KIM K S, PARK C H

Transfer method of graphene to target substrate, involves removing catalyst metal film adhered to flexible film, transferring graphene layer to target substrate, and removing transferred flexible film by compressing target substrate.

YOON J H, PARK J S