国家/地区 美国（21） 德国（17） 中国（15） 韩国（5） 欧洲专利局（EPO）（4）
IPC部 H（16） G（12） B（9）
C（6）
IPC大类 H01（14） G01（11） B81（6）
C01（6） B82（4） H04（4）
IPC小类 H01L（12） G01N（7） B81B（6）
C01B（6） B81C（5） B82Y（4）
H04R（4） G01L（3） G01M（2）
G01R（2） H01M（2）
IPC H01L029/16（10） G01N027/12（7） B81B007/02（6）
B81C001/00（5） G01N033/00（5） H01L021/02（4）
H01L029/06（4） H01L029/78（4） B81B003/00（3）
C01B031/04（3） H01L021/28（3） H01L021/324（3）
H01L021/336（3） H01L029/66（3） H01L043/14（3）
发明人 RUHL G（11） RUHR G（6） SCHULZE H（5）
ZOEPFL A（3） DEHE A（2） DEU A（2）
KOENIG M（2） ROTH A M（2） RUPP R（2）
公开年 2015（4） 2016（3） 2022（3） 2023（3） 2018（2）
申请年 2014（4）  2021（4）  2015（3）  2016（3）  2012（2）  2022（2） 
专利权人 INFINEON TECHNOLOGIES AG（21）

Temperature-regulated chemi-resistive gas sensor for use in e.g. mobile phone, has circuitry for determining electrical sensor layer conductance signal representing varying electrical conductance of sensor layer and applying time windows.

ZOEPFL A, ROTH A M, EMMERT M, MEYER M, KRIVEC M, BREUER W, KRIEBECK M, ROSS A L, JOYPLE A, ROTH M A

Differential gas sensor used for detection, storage and transportation of gaseous hydrogen in container or line, has second sensor component that is configured to supply second output signal and circuit which is configured to determine difference between first and second output signals.

MEINHOLD D, BRANDL F

Chip module has coating of electrically conductive area that is provided with layer of organic silicon compound or carbon compound in thickness, which has specific electrical surface contact resistance.

PUESCHNER F, SPOETTL T

Gas sensor for detection of hydrogen, has cavity that is hermetically sealed except for gas passage structure, and one or more sensor elements are configured to detect presence of one or more gases in cavity.

SCHALLER R M, EBERL M, JOST F, HEBERT M

Discrete or vertical power transistor device e.g. metal oxide semiconductor FET, for integrated circuit, has control electrode whose carbon adjoins dielectric opposite to channel region, where control electrode comprises gate electrode.

STORBECK O, SCHULZE H, SCHLOESSER T, MURI I, SIEMIENIEC R, STOBECK O, SCHLOSSER T

Gas sensing device e.g. chemiresistor gas sensing device for sensing target gas, has signal calibration unit that determines calibrated measurement value based on measurement signal and based on calibration model.

CARBONELLI C, KRUMBEIN U, TRAVAN C, KRUMBANE U

Composite material used for chemoresistive gas sensor, comprises graphene material, carbon nanotube material and metal-containing material including at least one metal element.

ROTH A M, ZOEPFL A, ROSS A M

Method for producing graphene-based sensor, involves matching set of separating structures and tensile strength of graphene layer to one another such that graphene layer tears at separating structures during wet-chemical transfer.

GLACER C, PINDL S, WITTMANN S, WEBER W

Method for forming graphene membrane component for microphone, involves performing energy of adhesion between adhesive layer and graphene membrane which is greater than energy of adhesion between bulk region and graphene membrane.

RUHL G, KOENIG M, RUHR G

Semiconductor device comprises transistor doping region of vertical transistor structure, graphene layer portion adjacent to portion of transistor doping region and transistor wiring structure adjacent to graphene layer portion.

SCHULZE H, RUPP R, RUHL G