国家/地区 韩国（9） 美国（7） 世界知识产权组织（4） 欧洲专利局（EPO）（2） 日本（2）
IPC部 H（8） B（6） C（3）
IPC大类 H01（7） B82（4） B01（2）
C04（2） C08（2）
IPC小类 H01L（5） B82Y（4） C04B（2）
C08K（2）
IPC B82Y040/00（4） H01L029/06（3） H01L021/02（2）
H01L021/36（2） H01L023/52（2） H01L033/00（2）
H01L033/02（2） H01L033/12（2）
发明人 KIM S（12） KIM S H（3） AN S（2）
AN S J（2） LEE D（2） LEE D G（2）
公开年 2012（3） 2022（3） 2013（2）
申请年 2011（4）  2020（2）  2022（2） 
专利权人 KIM S（12）

Mortar composition used for reinforcing concrete, comprises fine aggregate, inorganic filler comprising calcium sulfoaluminate and ilmenite, admixture comprising styrene-isoprene-styrene copolymer, polyvinyl acetate-vinyl chloride copolymer and phosphonate compound, and water.

HYUN K J, KIM S

Bed mattress for preventing bedsores, has remote control unit that is provided with wireless communication unit capable of wireless communication with user terminal in which healthcare platform is installed.

KIM S, KIMHYUNGKEUN

Catalyst material for proton exchange membrane fuel cell, comprises metal alloy which is ternary alloy.

KIM S, HANAUER M, BERNER U, SAUTER U, CRAIG N, JOHNSTON C, TUFFILE C

Concrete structure wall and floor repair method comprises cleaning and drying cracks and damaged areas generated on wall or floor of concrete structure, and applying repair material to cracks and breaks of the concrete structure.

KIM S, KIM G

Water purifying filter manufacturing used in direct water connection type water purification device, involves preparing porous reduced graphene oxide film by applying solution containing graphene oxide to substrate under heat-treating.

JUNGWONSUK, RYEONG C J, KANG J, SHUL C, KIM S, CHOI J W, SEONG S H

Multi-functional semiconductor device i.e. FET, for electronic system in electronic industry, has active pattern comprising buffer pattern on substrate, and doped pattern including graphene injected with impurity.

CANTORO M, WU Z, BHUWALKA K, KIM S, MAEDA S

Thermoelectric structure for forming thermoelectric device for thermoelectric apparatus, comprises graphene layer, and thermoelectric component comprising thermoelectric film and quantum dot on thermoelectric film, on graphene layer.

LEE K, KIM S, HWANG S, LEE S, LEE Y, HWANG S W, KIM S I, KIM S W, LEE K H, LEE S M, LEE Y H

Manufacture of graphene oxide reduced material for forming electrode for silicon-based semiconductor, involves synthesizing graphite oxide flakes from graphite flakes and forming graphene oxide dispersion solution.

JEONG S, LEE G, HAN J, JEONG H, KIM S, HAN J T, JEONG H J, JEONG S Y, KIM S H, LEE G W

Graphene electrical wire, has metal core having shape of fiber, and graphene layer synthesized on outer surface of metal core by chemical vapor deposition and produced by exfoliation.

KIM K, KIM Y K, KIM S

Thin-film transistor substrate for liquid crystal displays comprises insulating substrate; passivation film with contact hole exposing portion of drain electrode; and pixel electrode formed of carbon composition of carbon nanotubes/graphene.

NING H L, JEONG C, PARK J, KIM S, CHO S, KIM Y, BYUN J, JEONG C O, PARK J Y, KIM S G, CHO S H, KIM Y H, BYUN J S