国家/地区 韩国（13） 美国（6） 世界知识产权组织（4）
IPC部 C（14） B（8） H（6）
IPC大类 C23（14） C01（10） H01（6）
B01（5） B05（2） B32（2）
B82（2）
IPC小类 C23C（14）
IPC C01B031/02（10） C23C016/26（10） C23C016/06（4）
C23C016/44（4） C01B031/04（3） B01J019/08（2）
B01J023/755（2） B05D005/12（2） B32B009/00（2）
B82Y040/00（2） C23C016/02（2） C23C016/455（2）
H01B001/04（2） H01L021/00（2） H01L021/02（2）
发明人 JEON S（3） KIM S O（3） LEE J（3）
LEE K J（3） BYUNG J C（2） CHO B J（2）
CHOI I S（2） HWANG J O（2） LEE D H（2）
MUN J H（2） OH S（2） SEOK W J（2）
公开年 2013（5） 2012（3） 2014（3） 2015（2）
申请年 2013（5）  2012（4）  2011（3） 
专利权人 KOREA ADVANCED INST SCI TECHNOLOGY（14）

Producing graphene-copper composite thin layer, comprises producing a copper oxide layer on metal substrate by electroplating, producing a hydrophobic layer of copper by reducing copper oxide layer, and producing graphene thin film.

KIM G, OH I K

Formation of graphene layer on substrate used for semiconductor device, involves forming carbon source layer and metal catalyst layer on substrate, converting carbon source layer into graphene layer and removing metal catalyst layer.

BAEK J, JEON S, LEE J, BAEK J W, JEON S W, LEE J S

Chemical vapor deposition (CVD) auxiliary device for use in production of high quality and large sized graphene, has metallic foil that is deposited on substrate placed above sealing element provided between cover plates.

AHN C W, KANG I S, SHIN Y H, YOO K

Graphene layer formation method involves subjecting board comprising of stack of layers to high pressure annealing in vacuum atmosphere or inert gas atmosphere.

CHO B J, MUN J H

Board for forming graphene layer, comprises board layer; metal catalyst layer disposed on the board layer and functioning as a catalyst for forming the graphene layer; and stress reduction layer to reduce stress of the metal catalyst layer.

CHO B J, MUN J H

Graphene film, useful in a LCD element and electronic paper display device, comprises self-assembled monolayer formed on substrate, and graphene oxide thin films formed on self-assembled monolayer.

HWANG J O, KIM S O

Device, useful for producing graphene for transistor, comprises chamber with space for processing substrate, substrate support, gas supply, light source, focusing unit, and unit for transferring formed graphene layer on substrate.

BYOUNG W J, BYUNG J C, SEOK W J

Manufacture of graphene for top-gate FETs, involves forming graphene layer on base substrate, attaching target substrate onto layer, and separating graphene layer from base substrate to transfer graphene layer onto target substrate.

CHO B, KIM T, SHIN W, YOON T, BYUNG J C, TAE S Y, TAEK S K, WOO C S

Manufacture of graphene involves forming carbon-doped metal substrate, melting carbon-doped metal substrate by laser beam, cooling substrate and moving carbon-doped metal substrate in cooling phase.

LEE K J, CHOI I S

Producing graphene comprises doping carbon in metallic board, fusing board with carbon by irradiation, cooling fused metallic board, where carbon moves to metal board surface after cooling and growing grapheme on metal board surface.

LEE K J, CHOI I S