国家/地区 韩国（28） 世界知识产权组织（11） 美国（5） 中国（2） 欧洲专利局（EPO）（2）
IPC部 C（20） B（13） G（10）
H（10）
IPC大类 C01（15） H01（10） B32（7）
C23（7） B01（6） G03（5）
C08（4） G01（4） G02（2）
IPC小类 C01B（15） B32B（7） C23C（7）
H01B（6） B01J（5） G03F（4）
G01N（3） H01L（3） C08L（2）
G02F（2）
IPC C01B031/04（7） C01B032/182（5） B32B009/00（4）
B32B027/06（4） C01B031/02（4） C23C016/26（4）
G03F001/22（4） G03F001/62（4） H01B005/14（4）
C01B032/184（3） G03F001/64（3） G03F007/20（3）
B01J019/18（2） B32B015/08（2） C01B032/194（2）
发明人 KIM H K（29）
公开年 2013（7） 2017（7） 2014（6） 2015（3） 2021（2） 2022（2）
申请年 2012（6）  2013（4）  2016（4）  2011（3）  2014（3）  2017（3）  2015（2）  2020（2）  2022（2） 
专利权人 KOREA ELECTRONICS TECHNOLOGY INST（29）

Performing low-temperature direct growth method of multilayer graphene for manufacturing pellicle for extreme ultraviolet lithography, involves forming etch stopper on substrate, and forming seed layer on etch stopper, where seed layer is selected from boron nitride, or boron carbon nitride.

KIM H Y, CHO J W, KIM H M, KIM S G, KIM H K, KIM H, MI K H, KIM S K

Pellicle i.e. consumable component for protecting mask from contaminants in lithography process for semiconductor or display manufacturing, has substrate whose central portion is formed with opening, and pellicle layer containing amorphous carbon and core layer, formed on support layer.

KIM H Y, CHO J W, KIM H M, KIM S G, KIM H K, KIM H, MI K H, KIM S K, JEONJUNHYUCK, LEE S M

Preparing pellicle for extreme UV exposure with graphene defect healing layer, involves forming support layer of silicon nitride material on silicon substrate, and forming core layer of graphene material on support layer.

KIMHYUNGKEUN, MI K H, LEE W S, YANG H S, JOJINWOO, KIM B, JEONJUNHYUCK, LEE G H, KIM H Y, JEON J H, KIM S G, CHO J W, KIM H M, KIM H K

Directly growing multilayer graphene used in a pellicle for extreme ultraviolet lithography, involves forming small-layer graphene on SiN substrate, forming metal catalyst layer on small-layer graphene, and forming an amorphous carbon layer.

KIMHYUNGKEUN, MI K H, KIM H Y, LEE G H, SUNG K H, KIM H M, KIM S G, KIM H K

Method for manufacturing graphene, involves forming graphene layer on graphene growth substrate, and forming pattern for formation of graphene on graphene growth substrate.

KIM H K, KIM H

Graphene composite electrode used for manufacturing electrochromic device, consists of graphene layer, atomic layer formed on graphene layer, and transparent conductive layer formed on atomic layer.

KIM H K, KIM Y K, HAN S H, LEE S J, SEO J W

Manufacture of electrochromic device used as e.g. smart window, involves growing graphene on substrate, performing atomic layer deposition process on graphene layer, forming atomic layer, and forming conductive layer on atomic layer.

KIM H K, KIM Y K, HAN S H, LEE S J, SEO J W

Manufacture of graphene involves forming graphene pattern on graphene growth substrate, and forming graphene layer on graphene growth substrate.

KIM H K, KIM Y N

Graphene non-destructive testing method, involves extracting region in which metallic board is oxidized with light, and irradiating light in board in which graphene is synthesized on surface, and extracting oxidized board to microscope.

KIM H K, KIM Y K, KIM Y N, RHYU S H

Non-destructive inspecting graphene, comprises applying a reactive gas on a surface of a metal substrate on which graphene is synthesized, and detecting oxidized region of the metal substrate by the reactive gas.

KIM H K, KIM Y N