国家/地区 美国（8）
IPC部 H（8） C（3） B（2）
G（2）
IPC大类 H01（8） C01（3） G11（2）
IPC小类 H01L（8） C01B（3） G11C（2）
IPC H01L029/16（5） H01L029/78（4） H01L029/786（4）
C01B031/04（3） H01L021/768（3） H01L023/532（3）
H01L029/06（3） H01L029/66（3） H01L029/778（3）
H01L051/05（3） H01L051/30（3） C01B031/02（2）
H01L021/02（2） H01L021/336（2） H01L023/522（2）
发明人 SANDHU G S（3） SANDHU G（2）
公开年 2013（2） 2022（2）
申请年 2020（3）  2011（2） 
专利权人 MICRON TECHNOLOGY INC（8）

Graphene-containing-material for use in integrated assembly, comprises transition metal provided between graphene planes to improve out-of-plane-conductivity.

SARKAR S

Apparatus for voltage equalization for pillars of memory array, comprises access line, conductive pillar having first end configured for coupling with access line, conductive pillar having second end opposite first end of conductive pillar, memory cell coupled between conductive pillar and word line.

FANTINI P, BEDESCHI F, VILLA C

Integrated assembly for use in semiconductor device, comprises conductive line, and conductive structure over conductive line, where annular structure extending through conductive structure, and comprises dielectric material.

SILLS S E, HILL R J, KAEDING J F, HWANG D K

Integrated assembly e.g. transistor, comprises semiconductor material having more doped region adjacent less doped region, and two-dimensional material between doped regions.

KARDA K M, MOULI C, LIU H

Semiconductor structure for semiconductor device comprises graphene material and graphene-lattice matching material over at least a portion of graphene material.

MEADE R E, PANDEY S C

Memory cell switch for reversibly opening and closing circuit, has ferroelectric material formed between graphene structure and conductive structure, where conductive structure provides switch into on and off states.

SANDHU G S, SANDHU G

Method of forming switch e.g. graphene-containing switch for use as select device in memory device e.g. memory array, involves electrically coupling graphene structure with exposed portion of bottom electrode.

SANDHU G S, SANDHU G

Electrically conductive laminate structure useful in electrical interconnect, comprises graphene region sandwiched between pair of non-graphene regions, where non-graphene region includes electrically conductive non-graphene region.

SANDHU G S