国家/地区 日本（7） 世界知识产权组织（6） 台湾（5） 美国（3）
IPC部 H（8） C（4） B（3）
IPC大类 H01（8） C01（4） B82（3）
IPC小类 H01L（8） C01B（4） B82Y（3）
IPC H01L021/28（8）
发明人 KAWABATA A（2） SATO S（2） YAMAGUCHI J（2）
公开年 2014（4） 2015（2）
申请年 2013（4）  2014（3） 
专利权人 NAT INST ADVANCED IND SCI TECHNOLOGY（8）

Electron and optical device for use in electronic device, has laminated structure, in which intermediate layer is arranged between laminar substance material layer and metal electrode layer, where intermediate layer is taken as crystal layer.

WENHSIN C, TOSHIFUMI I, NAOYA O, YUTA S, SHOGO H

Semiconductor device e.g. graphene transistor has first and second boron carbon nitride (BCN) layers that are inserted between graphenes.

HARADA N

Graphene film in which many ribbon-shaped graphenes having a longitudinal edge structure of an arm chair type constitute a network structure used for manufacturing electronic device and top gate top contact thin film transistor.

YAMAGUCHI J, SATO S

Electronic device e.g. graphene transistors, has nanocarbon material, electrodes connected to nanocarbon material, and lower layer and upper layer containing molecular material having doping function on nanocarbon material.

SATO S, YAMADA A, YAGI K, TAKAHASHI M

Graphene structure used for transparent electrode, comprises substrate, base which is formed on top of substrate, and vertical graphene which grows from base and stands in vertical direction with respect to surface of substrate.

KAWABATA A

Graphene-carbon nanotube structure for refinement of wiring in semiconductor device, has substrate, base formed on substrate, vertical graphene which grows from base, and stands in vertical direction with respect to substrate surface.

KAWABATA A

Graphene transistor has gate structure portion which is formed by laminating insulating film and metal electrode on channel region of graphene that is formed on insulating film.

NAKAHARAI S, NAKABARAI S

Electronic apparatus e.g. transistor, has protective film consisting of transition metal oxide that is formed on graphene film which is formed on insulating substrate, and insulating layer formed on protective film with electrode.

YAMAGUCHI J