国家/地区 韩国（8） 美国（8） 中国（5） 世界知识产权组织（3） 欧洲专利局（EPO）（2）
IPC部 H（7） C（5） B（2）
IPC大类 H01（7） C01（5）
IPC小类 H01L（6） C01B（5） H01B（2）
IPC C01B031/04（5） H01L029/16（5） C01B031/02（3）
H01L021/336（3） H01L029/06（3） H01L029/66（3）
H01L029/78（3） H01L027/108（2） H01L029/786（2）
发明人 PARK S（9）
公开年 2014（4） 2015（2）
申请年 2013（4）  2015（2） 
专利权人 PARK S（9）

Manufacturing thermally conductive fabric comprises coating surface of yarn or fabric with vegetable oil by impregnating yarn or fabric with heated vegetable oil in yarn generating step or fabric generating step.

PARK S

Graphene device i.e. multi-functional device, for use in e.g. electronic apparatus e.g. transistor, has gate for facing functional layer with graphene layer, and gate insulation layer formed between graphene layer and gate.

HEO J, LEE K, PARK S, HEO J S, LEE K Y, PARK S J, LEE G, HUH J

Wiring structure for electronic device comprises conductive material layer and nanocrystalline graphene layer.

LEE C, SHIN H, PARK S, IM D, PARK H, SHIN K, LEE J, LIM H, LEE C S, SHIN H J, PARK S J, IM D H, SHIN K W, LEE J M, LIM H J, PIAO X

Graphene device e.g. FET, has gate electrode for applying electric field to graphene channel layer, and junction contact layers for contacting portions of channel layer, where contact layers are electrically separated from each other.

LEE J, BYUN K, SONG H, SHIN H, LEE M, YOO I, PARK S, LEE J H, BYUN K E, SONG H J, SHIN H J, LEE M H, YOO I K, PARK S J, SONG C, LI M

Manufacture of graphene for fabricating electronic device and display device, involves forming silicon carbide thin film on substrate, forming metal thin film on silicon carbide thin film, and heating to obtain metal composite layer.

LEE D W, SHIN H, PARK S, BYUN K, SEO D, SONG H, WOO Y, LEE J, CHUNG H, HEO J, SHIN H J, PARK S J, BYUN K E, SONG H J, WOO Y S, LEE J H, CHUNG H J, HEO J S

Memory device having FET structure, comprises graphene switching device having source, drain and gate electrodes and including Schottky barrier between drain electrode and channel in direction from source electrode toward drain electrode.

SEO D, KIM H, CHUNG H, PARK S, BYUN K, SONG H, HEO J, KIM H J, CHUNG H J, PARK S J, BYUN K E, SONG H J, HEO J S

Tunneling field-effect transistor (TFET) for controlling current tunneling through semiconductor between graphene channel and electrode, has gate insulating layer that is formed on graphene channel of semiconductor layer.

HEO J, PARK S, BYUN K, SEO D, SONG H, LEE J, CHUNG H, HEO J S, PARK S J, BYUN K E, SONG H J, LEE J H, CHUNG H J, XU D, HUH J, JUNG H

Manufacture of graphene involves loading catalytic metal layer into chamber, applying tensile force to catalytic metal layer, supplying carbon source to chamber, applying tension, and forming graphene on catalytic metal layer.

MOON J, RHO J, PARK S, KIM T, HONG B, PARK W, JUNG M, KIM T H, ROH J

Graphite/graphene composition, e.g. for use in paints, inks, and ultracapacitors comprises homogeneous suspension of graphite and/or graphene materials in liquid comprising organic solvent and water.

PARK S, RUOFF R S