国家/地区 韩国（40） 美国（31） 中国（11） 日本（8） 欧洲专利局（EPO）（5） 世界知识产权组织（2）
IPC部 H（35） B（27） C（20）
G（8）
IPC大类 H01（34） B82（22） C01（18）
B32（9） B01（6） C23（6）
G01（4） G02（3） H05（3）
B05（2） G11（2）
IPC小类 H01L（33） B82Y（20） C01B（18）
B32B（9） H01B（7） C23C（6）
B01J（4） B82B（4） H05B（3）
B05D（2） G01R（2） G02F（2）
G11C（2）
IPC C01B031/02（12） H01L021/336（12） B82Y030/00（11）
H01L029/78（11） H01L029/786（11） B82Y040/00（10）
H01L029/16（10） B82Y099/00（9） C01B031/04（7）
C23C016/26（5） H01B001/04（5） H01L029/06（5）
H01L051/30（5） B32B009/04（4） B82B003/00（4）
发明人 CHOI J（11） CHOI J Y（11） SHIN H J（7）
LEE J H（6） WHANG D M（6） LEE J（5）
SHIN H（5） CHOI B L（4） LEE C（4）
LEE C S（4） LEE E K（4） YOON S（4）
CHOI B（3） CHUNG H（3） CHUNG H J（3）
公开年 2013（28） 2012（10） 2014（4）
申请年 2012（42）
专利权人 SAMSUNG ELECTRONICS CO LTD（42）

Method of transferring graphene involves forming graphene layer on substrate including semiconductor catalyst and forming thin film on graphene layer.

CHOI J Y, LEE J H, WHANG D M

Preparing graphene e.g. single layer graphene, uses in electrode of lithium ion battery, comprises supplying raw material gas containing carbon-containing compound to silicon oxide nanowires, and growing graphene on surface of nanowires.

PARK J J, KIM B S, JEON S H, WHANG D M

Making nanowire-graphene structure used in e.g. electric device by growing pinned layer on substrate, growing nanowires on graphene layer, separating pinned layer from substrate, and forming covalently bonded material on pinned layer.

CHOI B L, LEE E K, LEE J H, WHANG D M

Preparing reduced graphene oxide that is useful for preparing a reduced graphene oxide-polymer composite, comprises mixing graphene oxide with a hydrazide compound, and then stirring the mixture.

PARK J J, PARK C E, BAE J H, IM J K, JEON S H, HWANG J H

Graphene transfer method involves forming graphene on substrate, coating mixture containing polystyrene and solvent on the graphene, forming protective layer, and removing substrate and protective layer.

KIM U J, HUR J H, KIM J E, ROH Y G, PARK Y S, LEE C W, LEE J S, CHEON S M

Interconnect structure for integrated microelectronic circuit, has graphene cap which is provided with edges that are vertically coincident with edges of copper structure.

BONILLA G, DIMITRAKOPOULOS C D, GRILL A, HANNON J B, LIN Q, NEUMAYER D A, OIDA S, OTT J A, PFEIFFER D, DIMITRAKOPOULOS C, HANNON J, NEUMAYER D, OTT J, DIMITRAKO P C D, GREER A

Solar cell, has front electrodes arranged on front surface of photovoltaic layer, where transparent subsidiary electrode is placed on front surface of photovoltaic layer and front surface of front electrodes, and made of graphene.

CHANG J, SUH M, HEO J, CHANG J E, SUH M G, HEO J S

System, used to prevent corrosion of metals e.g. lithium, comprises a graphene layer formed on a metallic layer, where the metallic layer including a first metal and a second metal that are dipped in a metal solution.

CHAE S J, CHOI J Y, FETHULLAH G, LEE Y H, SHIN H J, YAO F

Semiconductor light emitting device e.g. LED has transparent electrode which is made of graphene layer and contact layer, and active layer which is formed between n-type and p-type nitride semiconductor layers.

SHIM H W, KIM Y S, KIM S T

Nanogap sensor used in device to detect biomolecule in sample, comprises micropore layer comprising micropore, graphene sheet disposed on layer and comprising nanoelectrode region, and first and second electrodes disposed on graphene sheet.

SHIM J, JEON T, EOM K, LEE D, JEONG H, CHO S, SHIM J Y, JEON T H, EOM K S, LEE D H, JEONG H J, CHO S H