国家/地区 美国（10） 韩国（8） 中国（6） 欧洲专利局（EPO）（5）
IPC部 H（10） G（5） C（4）
B（2）
IPC大类 H01（10） C01（4） G01（3）
B82（2） G02（2）
IPC小类 H01L（8） C01B（4） H01M（3）
B82Y（2） G01J（2） G01N（2）
H01B（2）
IPC C01B032/186（3） H01L021/02（3） H01L029/16（3）
B82Y030/00（2） B82Y040/00（2） C01B032/182（2）
H01B001/04（2） H01L027/146（2） H01L031/028（2）
H01L031/09（2） H01M004/133（2） H01M004/38（2）
H01M004/48（2） H01M004/587（2） H01M010/0525（2）
发明人 PARK S（4） KIM S（3） PARK S J（3）
SHIN H（3） SHIN H J（3） KIM J（2）
LEE D（2） LEE D W（2） LEE J（2）
LEE J H（2） NAM S（2） NAM S G（2）
公开年 2018（6） 2017（4）
申请年 2017（10）
专利权人 SAMSUNG ELECTRONICS CO LTD（10）

Semiconductor device comprises substrate comprising insulator and semiconductor comprising group IV material and/or group III-V compound, and graphene layer grown on surface of semiconductor.

SHIN K, SHIN H, CHO Y, NAM S, PARK S, LEE Y, SHIN K W, SHIN H J, CHO Y C, NAM S G, PARK S J, LEE Y S

Optical sensor comprises first electrode, graphene quantum dot layer, graphene quantum dot layer which comprises multiple of first graphene quantum dots which are bonded to first functional group and multiple of second graphene quantum dots.

LEE J, SHIN H, LEE D, PARK S, LEE K, LEE E, JO S, HEO J, LEE G, LI Y, ZHAO C, HUH J, LEE J H, SHIN H J, LEE D W, PARK S J, LEE K Y, LEE E K, JO S H, HEO J S

Optical sensor for detecting target object in infrared region, comprises substrate, which is provided with topological insulator layer, where oxide layer is formed on topological insulator layer, and graphene layer is stacked on oxide layer.

KIM U, ROH Y, KIM J, IN C, CHOI H, KWON J, KIM U J, ROH Y G, KIM J S, IN C H, CHOI H Y, KWON J H

Multi-stack graphene structure, has graphene layers and thin dielectric layers stacked on one another, where graphene layers comprise amorphous graphene, and electric field applying electric field to graphene layers.

JOO W, KANG J, KIM S, BRONGERSMA M L, FAN S, JOO W J, KANG J H, KIM S J

Porous silicon composite clusters used in carbon composite for electrode, comprise porous core comprising silicon secondary particles comprising aggregates of silicon primary particles comprising silicon, silicon oxide and graphene.

SON I, LEE J, PARK S, HAN S, SON I H, LEE J M, PARK S Y, LEE J H, HAN S S, LI Z

Heat dissipation structure using graphene quantum dots, has heat dissipation film which is placed on heating element to dissipate heat generated from heating element, to outside.

LEE D, KIM S, SEOL M, JEONG S, NAM S, PARK S, SHIN H, XUE M, ZHENG C, NA S, LEE D W, KIM S W, SEOL M S, JEONG S J, NAM S G, PARK S J, SHIN H J

Metal-air battery utilizing oxygen as active material, comprises electrolyte which is disposed between anode portion having metal and cathode portion having porous layer which comprises reduced non-stacked graphene oxide.

JUNG I, KWON H, KIM M, KIM J, BYUN S, YU D, YUN D, LEE H, JIN M, JIN Z, LIU D, YIN T, JUNG I S, KWON H J, KIM M W, KIM J H, BYUN S J, YU D E, YUN D J, LEE H S

Semiconductor device e.g. dynamic RAM device for use in electronic system, has doped pattern provided between buffer and channel patterns, and buffer pattern provided, where doped pattern comprises graphene injected with impurity.

CANTORO M, WU Z, BHUWALKA K, KIM S, MAEDA S

Nano graphene-enhanced particulate used as anode active material for lithium-ion battery comprises graphene sheets and fine anode active material particles which are mutually bonded or agglomerated into particulate.

ZHAMU A, SHI J, CHEN G, FANG Q, JANG B Z

Electrical conductor for use in electronic devices, has first conductive layer that includes graphene which is p-doped with p-type dopant, formed in first surface facing second conductive layer and second surface.

SOHN H, SHIN W, WOO Y S, SUN X, XIN Y, YEO R, SOHN H S