国家/地区 中国（21）
IPC部 C（11） H（7） G（6）
A（2） B（2）
IPC大类 C01（9） H01（7） G01（6）
C30（3） A61（2） B82（2）
IPC小类 C01B（9） H01L（7） G01N（6）
C30B（3） A61L（2） B82Y（2）
IPC C01B031/04（9） H01L021/336（4） B82Y040/00（2）
C30B029/02（2） H01L021/04（2） H01L021/28（2）
发明人 XIE X（10） ZHANG Y（8） CHEN Z（7）
JIANG M（7） YU G（7） ZHANG H（7）
DING G（6） LI X（6） SUI Y（6）
WANG B（5） CHEN J（4） WANG H（4）
WU T（4） XIE H（4） ZHANG X（4）
公开年 2014（13） 2015（7） 2016（2）
申请年 2014（22）
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（22）

Graphene screen print electrode, has work electrode main body coated with solid insulation paste that is formed with electrode standard layer, and pair electrode connected with reference electrode that is connected with rubber assembly.

JIN Q, JIN Y, LIU D, WANG X, SHAO Y, ZHAO J, HUANG S

Doped graphene preparing method, involves forming nickel thin film layer on copper substrate, and N-type graphene and P-type doped graphene formed respectively on N-type doped element-rich area and P-type doped element-rich zone.

DI Z, CHEN D, DING G, GUO Q, MA J, WANG G, XIE X, XUE Z, ZHANG M, ZHENG X, DAI J

Method for doping sulfur on graphene involves placing graphene in chemical vapor deposition reaction chamber, introducing sulfur source gas to perform sulfur doping on graphene and cooling hydrogen and inert gas atmosphere.

LI T, LIANG C, WANG Y

Flexible metal substrate device for growing graphene thin film, has reflective plate that is located on outer peripheral side of heater for reflecting heat chamber in inward direction.

CHEN Z, HU B, WU H, WU K, XU W, ZHANG H, ZHANG Y, XI M, YU G

Method for representing graphene, involves forming graphene on substrate, and followed by judging damage condition of graphene surface according to corrosion degree of lower part of graphene substrate.

CHEN Z, LI X, SUI Y, WANG B, ZHANG H, ZHANG Y, YU G

Method for determining use of chemical vapor deposition grown graphene crystal orientation of polycrystalline copper substrate surface, has determining use of graphene crystal orientation of copper substrate surface.

CHEN Z, LI X, SUI Y, WANG B, ZHANG H, ZHANG Y, YU G

Selection of qualified region of chemical vapor deposited graphene film during fabrication of microelectronics, involves heating chemical vapor deposited graphene film formed on metal substrate using reaction gas, and removing defect.

CHEN Z, LI X, SUI Y, WANG B, ZHANG H, ZHANG Y, YU G

Graphene quantum dot-and-silk protein antibacterial composite material comprises graphene quantum dot or doped-graphene quantum dot and silk protein having preset molecular weight in preset mass ratio.

DING G, JIANG M, XIE X, TAO H, YANG S

Peripheral blood circulation tumor cells detection chip, has single layer graphene film, capacitor circuit and spiral inductor circuit forming resonance network, where spiral inductor circuit acts as cross coupling effect of antenna.

JIN B, LI G, MAO H, SUN X, WU Z, SUN H, ZHAO J, ZHANG Q

Manufacture of graphene flash memory involves patterning conductive layer formed on semiconductor substrate, forming source/drain electrodes, dielectric layers, graphene layer and gate electrode, and etching dielectric layers.

WANG H, JIANG M, LI L, XIE X, WU T, CHEN J, LU G, XIE H, ZHANG X