国家/地区 中国（10）
IPC部 C（4） B（3） G（3）
H（3）
IPC大类 B82（3） G01（3） H01（3）
C09（2）
IPC小类 B82Y（3） G01N（3） C09K（2）
H01L（2）
IPC B82Y020/00（2） B82Y030/00（2） C09K011/65（2）
发明人 DING G（5） YANG S（4） LIANG Y（2）
WU T（2） XIE X（2） XU A（2）
ZHANG Y（2）
公开年 2020（5） 2021（4）
申请年 2020（10）
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（10）

Method for manufacturing nanometer cantilever beam with recoverable deformation, involves developing and fixing cantilever beam structure to be developed to obtain cantilever beam structure corresponding to cantilever beam structure diagram and irradiating cantilever beam housing.

QIN N, TAO H

Silicon-based germanium detector has detector main housing which includes silicon material, silicon dioxide layer and germanium layer, substrate covers germanium layer, and graphene film is provided on metal electrode.

ZHANG Y, CAO X, WU A

Nuclear magnetic resonance detection method based on biosensor for detecting biological marker of kit, involves mixing first solution with sample to be tested to provide second solution, and providing relaxation time of second solution.

DONG H, LI Y, YANG S, DING G, XIE X

Preparing solid-state photoluminescence graphene quantum dots comprises useful in the field of anti-counterfeiting mixing melamine, precursor and solvent, heating reaction solution for hydrothermal reaction, and cooling to room temperature.

DING G, XU A, YANG S

Preparing white light graphene quantum dot phosphors used in the field of lighting, involves mixing melamine, p-phenylenediamine and solvent uniformly to form a reaction liquid, and heating reaction solution for hydrothermal reaction.

DING G, XU A, YANG S

Graphene-phase change material structure comprises a phase change material layer, and a graphene layer is arranged on the top or bottom of the phase change material layer.

SONG Z, SONG W, ZHAO J, WU T

Preparing graphene single crystal wafer on copper-based textured film substrate comprises placing copper-based textured film substrate in chemical vapor deposition system for annealing, and epitaxially growing graphene single crystal wafer.

ZHANG X, WU T, WANG H, YU Q, XIE X

Graphene quantum dot transverse size characterization method based on flight time mass spectrum involves dissolving graphene quantum dot powder in a solvent to prepare a first mixed solution.

DING G, YANG S, LIANG Y, GE Z

Reversely transferring graphene comprises e.g. providing graphene grown on metal substrate, spin-coating first colloid on first surface of graphene to form first colloidal graphene-metal substrate structure, and sticking tape on first gel.

CHEN Z, YU G, ZHANG Y, SUI Y, LIANG Y, HU S, LI J, KANG H, WANG S

Graphene-based surface-enhanced Raman scattering substrate manufacturing method, involves applying external force to composite film layer to break composite film layer for obtaining cross section layer as Raman scattering substrate.

HE P, DING G, CAO Z