国家/地区 中国（15）
IPC部 G（7） C（5） H（5）
B（2）
IPC大类 G01（6） H01（5） C01（3）
C23（3） C30（2）
IPC小类 G01N（5） H01L（5） C01B（3）
C23C（3） C30B（2）
IPC C01B031/04（2） C23C016/26（2） G01N027/00（2）
H01L043/06（2） H01L043/14（2）
发明人 XIE X（7） WANG H（6） JIANG M（5）
XIE H（4） DI Z（3） JIN Q（3）
MA J（3） WANG G（3） WANG X（3）
WU T（3） XUE Z（3） ZHANG M（3）
ZHAO J（3） CHEN D（2） DING G（2）
公开年 2016（16）
申请年 2015（7）  2016（7）  2014（2） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（16）

Graphene-based surface enhancement Raman substrate, has substrate main body whose surface is formed with porous graphene structure, where porous graphene structure is fixed with metal granule and formed with multi-hole graphene films.

SUI Y, YU G, ZHANG Y, CHEN Z, GE X, ZHANG H

Transferring graphene to target substrate used to obtain multilayer graphene, involves depositing graphene on first substrate, covering graphene with buffer layer and adhering heat release adhesive tape on buffer layer.

CHEN J, WU T, WANG H, XIE X

Quantum interference device structure for use in sensors and other devices, comprises first superconductor layer and first dielectric layer, graphene layer, second dielectric layer, metal layer and second superconducting layers.

WANG H, XIE H, LI L, YANG P, XIE X, JIANG M

Graphene-based adjustable photo-transparent waveguide structure, has graphene waveguide provided with first and second graphene strips, where predetermined distance is measured between first graphene strip and graphene waveguide.

JIANG X, WANG L, LI W

Method for preparing quantum hall device, involves forming superconducting thin film layer on substrate, covering with dielectric thin film layer, and forming graphene layer, followed by forming metal electrode.

WANG H, XIE H, WANG X, XIE X, JIANG M

Method for modifying surface of medical titanium material, involves preparing graphene film on surface of medical titanium material.

DI Z, WANG G, LI J, LIU X, CHEN D, GUO Q, MA J, XUE Z, ZHANG M

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Preparation of two-dimensional tin graphene material involves carrying out epitaxial growth of monolayers or multi-atomic layer of (alpha)-tin crystal thin film on single crystal substrate and electron bombardment using atoms and ions.

LI Y, SONG Y, WANG S, ZHANG Z, ZHANG L

Photo-resist graphene removing method, involves forming silicon nitride layer on photo-resist graphene part, performing photo-resist acetone leaching part removing process, and performing photo-resist graphene removing process.

DI Z, JIA P, MA J, WANG G, WANG X, XUE Z, ZHANG M, ZHENG X

Preparation of metal vapor auxiliary layer rapid growth graphene comprises taking copper-nickel alloy substrate, washing, placing in chemical vapor deposition chamber, positioning, sparging with argon and methane, and growing.

JIANG M, LU G, XIE X, YANG C, WU T, ZHANG X, WANG H