国家/地区 中国（13）
IPC部 C（6） H（4） G（3）
IPC大类 C01（5） H01（4） G01（3）
IPC小类 C01B（5） G01N（3） H01L（3）
IPC C01B032/186（2） C01B032/194（2） H01L029/16（2）
发明人 DING G（4） XIE X（4） LIANG Y（3）
WU T（3） YANG S（3） YU G（3）
YU Q（3） CHEN Z（2） HU S（2）
KANG H（2） LI J（2） SHI Z（2）
SUI Y（2） WANG S（2） ZHANG Y（2）
公开年 2020（13）
申请年 2019（8）  2020（5） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（13）

Graphene FET for use in integrated circuit, has one conductive region that is formed by graphene doped with conductivity type, and other conductive region which is formed by graphene doped with another conductivity type.

WANG C, YE L

Graphene-phase change material structure comprises a phase change material layer, and a graphene layer is arranged on the top or bottom of the phase change material layer.

SONG Z, SONG W, ZHAO J, WU T

Preparing graphene film useful in electronic devices, comprises adjusting catalyst on silicon carbide substrate, heating obtained reaction sample, dissolving the silicon atoms contained in silicon carbide substrate and post treating.

ZHU H, WU T, CHEN J, ZHANG C, SHI Z, YU G

Kit used for screening and diagnosing cancer e.g. eye choroid melanoma and cervical cancer, comprises solution A comprising cyclotriphosphazene doped graphene quantum dots, and solution B comprising phosphate buffer saline buffer solution.

DING G, YANG S, XU A

Preparing dual-modal contrast agent by dissolving graphene quantum dots in solvent, ultrasonically treating, adding gadolinium inorganic salt, performing solvothermal reaction, performing dialysis and purification and freeze-drying agent.

DONG H, LI Y, YANG S, DING G, XIE X

Preparing graphene single crystal wafer on copper-based textured film substrate comprises placing copper-based textured film substrate in chemical vapor deposition system for annealing, and epitaxially growing graphene single crystal wafer.

ZHANG X, WU T, WANG H, YU Q, XIE X

Graphene quantum dot transverse size characterization method based on flight time mass spectrum involves dissolving graphene quantum dot powder in a solvent to prepare a first mixed solution.

DING G, YANG S, LIANG Y, GE Z

Reversely transferring graphene comprises e.g. providing graphene grown on metal substrate, spin-coating first colloid on first surface of graphene to form first colloidal graphene-metal substrate structure, and sticking tape on first gel.

CHEN Z, YU G, ZHANG Y, SUI Y, LIANG Y, HU S, LI J, KANG H, WANG S

Graphene-based surface-enhanced Raman scattering substrate manufacturing method, involves applying external force to composite film layer to break composite film layer for obtaining cross section layer as Raman scattering substrate.

HE P, DING G, CAO Z

Preparing silicon based substrate heterogeneous integrated graphene, comprises e.g. providing silicon based substrate, then forming dielectric layer on surface of the silicon based substrate, depositing graphene film and etching.

OU X, YI A, LIN J, ZHANG S, YU Q, XIE X