国家/地区 世界知识产权组织（15）
IPC部 C（12） B（5） H（5）
G（2）
IPC大类 C01（12） C23（7） H01（5）
B82（4） C30（3） G01（2）
IPC小类 C01B（12） C23C（7） H01L（5）
B82Y（4） C30B（3） G01N（2）
IPC C01B031/04（8） C23C016/26（5） B82Y040/00（4）
C01B032/186（3） C23C016/02（3） B82Y030/00（2）
C01B031/02（2） C23C016/50（2） C30B029/02（2）
H01L021/04（2） H01L021/336（2） H01L029/78（2）
发明人 DING G（9） XIE X（9） JIANG M（6）
TANG S（4） DI Z（3） CHEN J（2）
GONG Q（2） LI T（2） LIANG C（2）
SUN L（2） WANG H（2） WANG S（2）
WANG Y（2） WU T（2）
公开年 2012（6） 2013（2）
申请年 2012（4）  2011（3）  2013（2）  2019（2） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（15）

New kit based on nitrogen-doped carbon fluorescent quantum dot comprising carbon nitrogen fluorescent quantum dot solution composed of carbon-nitrogen fluorescent quantum dot and solvent, and buffer solution useful for detecting tumor cell.

FAN X, DING G, ZHOU H, YANG S, LI J

Preparing silicon based substrate heterogeneous integrated graphene, comprises e.g. providing silicon based substrate, then forming dielectric layer on surface of the silicon based substrate, depositing graphene film and etching.

OU X, YI A, LIN J, ZHANG S, YU Q, XIE X

Preparing high quality graphene material comprises adding electrolyte solution, graphite raw material and electrode, applying electric field, intercalating of cleavage graphite, washing, removing electrolyte solution and drying.

HE P, DING G, ZHANG P, XIE X

Manufacture of gas sensor for nitrogen oxide, involves placing microheater platform substrate having graphene-covered surface, to chemical vapor deposition reactor, injecting inert gas, hydrogen and sulfur source gas, reacting and cooling.

LI T, GUO L, LIANG C, WANG Y

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Method for doping sulfur on graphene involves placing graphene in chemical vapor deposition reaction chamber, introducing sulfur source gas to perform sulfur doping on graphene and cooling hydrogen and inert gas atmosphere.

LI T, LIANG C, WANG Y

Graphene modulated high-k metal gate germanium-based MOS device manufacturing method, involves forming graphene thin film on Germanium-based substrate, and forming high-k gate dielectric on surface metal electrode.

DI Z, WANG G, WANG X, ZHANG M, ZHENG X

Rapid thermal processing method for preparing graphene powder in air atmosphere comprises putting precursor of graphene in non-sealing cover crucible, then carrying out heat treatment to obtain graphene powder.

DING G, JIANG M, LI X, SUN J, XIE X

Method of preparing double-gate MOSFET based graphene used in e.g. microelectronics field, involves forming back grid electrode over high-k gate thin film at back of substrate, after forming graphene at interface of substrate layers.

CHAI Z, CHEN J, LUO J, WU Q, YU T

Preparation of graphene by selecting substrate material, depositing directly catalyst and tetrabromomethane on substrate surface, and annealing substrate.

DI Z, DING G, GONG Q, LIU Q, WANG H, WANG S, XIE X