国家/地区 世界知识产权组织（12） 美国（10）
IPC部 H（11） C（10） B（6）
IPC大类 H01（11） C01（9） B82（5）
C23（2）
IPC小类 H01L（10） C01B（9） B82B（3）
B82Y（2） C23C（2）
IPC H01L021/02（6） C01B031/04（5） C01B031/02（4）
H01L021/20（4） H01L029/16（4） H01L029/66（4）
B82B003/00（3） B82Y040/00（2） C23C016/26（2）
H01L029/06（2） H01L029/778（2）
发明人 DAVIS M A（17）
公开年 2014（15）
申请年 2014（11）  2013（5） 
专利权人 SOLAN LLC（17）

Method for forming graphite-based structure on substrate, involves generating first and second graphene layers on entire first surface of element and entire second surface of trench, respectively, where graphene layers has graphene sheets.

DAVIS M A

Forming a graphene device, used to fabricate electronic device, comprises e.g. patterning a substrate to form many elements and trenches on substrate, and segmentedly overlaying a carbon source and initiating material on each element.

DAVIS M A

Multi-level stacked graphene structure, useful e.g. in electronic devices, comprises first graphene level overlayed on substrate, first interlayer overlayed on first graphene level, and second graphene level overlayed on first interlayer.

DAVIS M A

Method of manufacturing graphene device involves growing respective graphene stack in graphene stacks on each exposed side wall in exposed side walls.

DAVIS M A

Heterogeneous graphene-based device comprises graphene stack which has lattice orientation and band gap energy, another graphene stack which has lattice orientation and with or without band gap energy, and electrically conductive contact.

DAVIS M A

Forming graphene device includes creating foundation material on substrate having crystallographic or amorphic state, causing the material to adopt favored crystallographic or amorphic state and forming first graphene stack in first region.

DAVIS M A

Integrated graphene-based structure for electronic device used in optical system, has array of quantum dots that exhibits set of characteristic electromagnetic interference properties in response to electromagnetic radiation.

DAVIS M A

Forming graphite-based device on substrate for used in solar cells involves creating graphene foundation layers containing non-planar graphene foundation layer on substrate, and generating graphene stack from graphene foundation layers.

DAVIS M A

Graphite based device, useful e.g. in solar cells, comprises substrate comprising set of zones, graphene stacks, and feature formed in the first zone, where first graphene stack is formed in first zone comprising nonplanar graphene layer.

DAVIS M A

Graphite-based device useful in e.g. electronic device, solar cells comprises a substrate comprising zones, and graphene stacks which are formed in zones and comprises non-planar graphene layers having bending angle or curvature.

DAVIS M A