国家/地区 美国（9）
IPC部 H（9） B（7） G（4）
IPC大类 H01（9） B01（3） G01（3）
B29（2） B82（2）
IPC小类 H01L（9） B01L（3） G01N（3）
B29C（2） B82Y（2）
IPC H01L029/16（4） H01L029/66（4） B01L003/00（3）
G01N027/414（3） H01L023/373（3） B29C065/48（2）
B29C065/54（2） H01L021/02（2） H01L021/3205（2）
H01L021/56（2） H01L023/00（2） H01L029/06（2）
发明人 ACCARDI C（5） LOVERSO S（5） RAVESI S（5）
SPARTA N G（5） BENINI L（2） CERIATI L（2）
SCURATI M G（2）
公开年 2014（3） 2016（3） 2013（2）
申请年 2013（3）  2015（3）  2014（2） 
专利权人 STMICROELECTRONICS SRL（9）

Semiconductor device e.g. integrated circuit, has thermally-conductive layer arranged on surface of package material, thermally-conductive layer faces surface of semiconductor die, where thermally-conductive layer includes graphene.

ZIGLIOLI F G

Manufacturing method of graphene-based electrochemical sensor, involves providing metal layer on first substrate.

ACCARDI C, LOVERSO S, RAVESI S, SPARTA N G

Electrochemical sensor for use in microfluidic system, has graphene layer that forms wall of microfluidic chamber and configured to act as channel-region of FET.

ACCARDI C, LOVERSO S, RAVESI S, SPARTA N G

Forming method of microstructure device such as integrated circuits involves providing thermally conductive filler material including graphene flakes, between microstructure device chip and substrate.

SCURATI M G, CERIATI L, BENINI L

Method for coupling graphene layer and doped silicon substrate of electronic device e.g. transistor, involves providing solvent layer on hydrophilic surface of doped silicon substrate, and depositing graphene layer on solvent layer.

SPARTA N G, TRINGALI C, LOVERSO S, RAVESI S, ACCARDI C, GIANNAZZO F

Microstructure device e.g. integrated circuit device of semiconductor device, has intermediate heat transfer layer which is positioned between surface of substrate and microstructure device chip and is provided with graphene flakes.

SCURATI M G, CERIATI L, BENINI L

Cellular automata assembly, useful in electronic device for processing signal, comprises basic cells that comprise graphene layers used to induce coupling field distributions and interact to each other to determine a logic state of signal.

PORTO D

Making electrochemical sensor used in device, contains e.g. forming graphene layer on metal layer present on donor substrate, forming structural layer on graphene layer and separating intermediate structure from donor substrate.

ACCARDI C, LOVERSO S, RAVESI S, SPARTA N G

Transferring graphene layer comprises growing graphene layer on metal layer, laminating dry film photoresist on graphene layer, chemically etching away metal layer, and removing dry film photoresist.

ACCARDI C, LOVERSO S, RAVESI S, SPARTA N G