国家/地区 中国（22）
IPC部 H（13） C（11）
IPC大类 H01（12） C01（9） C23（3）
IPC小类 C01B（9） H01L（9） C23C（3）
H01G（3） H01M（3）
IPC C01B031/04（8） C23C016/26（3） H01L021/34（3）
H01L031/0352（3） H01L031/18（3） C23C016/02（2）
H01G009/042（2） H01G009/20（2） H01L021/44（2）
H01L029/78（2） H01L051/44（2） H01L051/48（2）
H01M014/00（2）
发明人 LI P（22）
公开年 2012（5） 2013（5） 2011（4） 2016（3） 2021（2） 2023（2）
申请年 2012（5）  2013（4）  2011（3）  2015（3）  2010（2）  2020（2）  2022（2） 
专利权人 UNIV CHINA ELECTRONIC SCI TECHNOLOGY（22）

Method for constructing two-dimensional semiconductor device array, involves utilizing electron beam to evaporate metal mark, and removing glue and peeling off for obtaining patterned metal electrode.

LI X, LI P, DENG Y, CAO N

Design and construction process of molybdenum disulfide photodiode detector sandwich structure use in optoelectronic system used in military or civil field involves cleaning silicon wafer, cutting silicon dioxide/silicon substrate into square substrate, and blowing large particle silicon slag.

LI P, ZHOU T, CAO N

Preparation of N-type single-layer sulfur-doped graphene film involves heat-treating copper foil, transferring graphene from copper foil to silicon substrate, cutting, fixing on polyethylene terephthalate, etching copper foil and washing.

ZHOU Y, CAO N, LI P

Regulating number of molybdenum disulfide layers in molybdenum disulfide/graphene heterojunction comprises using methane and hydrogen, placing polished copper foil into quartz tube and graphene-transferred silicon dioxide/ substrate.

XU K, ZHOU Y, LI P

Manufacture of sulfur-doped graphene film for sensor, involves placing metal substrate and thioanthracene in heating zones of reaction chamber, respectively, annealing substrate, heating thioanthracene, and cracking thienanthracene.

CHEN Y, ZHOU J, LIU J, QI F, ZHENG B, HE J, WANG X, LI Q, LI P, ZHANG W

Preparation method of self-alignment graphene-black phosphorus transistor structure, involves forming graphene thin film or black phosphorus thin film on the substrate, for performing patterning process of the thin film.

CHEN Y, LI P, WANG G, ZHANG Q, SONG L

Silicon grade graphene and black phosphorus transistor, has substrate arranged with upper surface of oxidation silicon isolation layer, and source electrode connected with leakage electrode that is arranged with phosphorus layer.

CHEN Y, LI P, WANG G, ZHANG Q

Preparation of nitrogen-doped graphene quantum dot dispersion for biological imaging and fluorescent probe, involves dissolving glucose in water, adding aqueous ammonia, reacting, removing excess ammonia, purifying and centrifuging.

CHEN Y, LI P, QI F, ZHANG W, LIU J, HE J, ZHENG B

Preparing double-layer graphene thin film used in field of e.g. micro-electronics, comprises e.g. coating catalyst on the surface of metal foil/thin film substrate, drying, placing in reaction chamber, pumping vacuum, and filling hydrogen.

LI P, WANG Z, CHEN Y, ZHANG W, LIU J

Preparation of epitaxial graphene, involves cleaning surface of silicon carbide substrate in induction heating graphite boat, evacuating, cooling, re-evacuating, and cooling to room temperature.

CHEN Y, HAO X, LI P, LI Y, WANG Z, ZHANG W, LIU J