国家/地区 中国（10）
IPC部 H（9） C（3）
IPC大类 H01（9） C01（2）
IPC小类 H01L（7） C01B（2）
IPC H01L029/49（3） C01B031/04（2） H01L029/06（2）
H01L029/36（2） H01L029/78（2）
发明人 WANG W（6） HUANG W（3） YAN S（3）
CHEN J（2） LU F（2） XIA C（2）
XIAO G（2） XIE L（2） YANG H（2）
YI M（2）
公开年 2013（10）
申请年 2013（8）  2012（2） 
专利权人 UNIV NANJING POSTS TELECOM（10）

Cadmium selenide quantum dots loaded graphene for solar battery device and photocatalysis comprises rich nitrogen structure and surface loaded cadmium selenide quantum dots, and graphene from graphite oxide.

JIANG H, MAO B

FET integrated heterogeneous material graphite nano-gate structure, has FET provided with source region and drain region that are made of intrinsic semiconductor graphene nanometer belt.

YANG X, WANG W, XIA C, XIAO G

Double-material hetero-gate field effect transistor, has material heterogeneous grid provided with two conductive metal materials, intrinsic graphene material provided with conduction channel, and underlap region provided with drain region.

YAN S, WANG W, WANG Y

Preparation of reduced graphene oxide-based transparent conductive thin film useful as electrode, involves plasma-treating polyethylene terephthalate substrate, coating graphene oxide film, and reducing using hydrogen iodide solution.

HUANG W, XIE L, LIU Z, YANG Y, YIN Z, YI M

Halo-doped double-heterojunction material graphene strip has source electrode and drain electrode which are respectively provided with same length of source region and drain region.

WANG W, XIA C, XIAO G

Preparing selectively reducing graphene oxide used in preparing electrical storage device, comprises e.g. preparing graphene oxide solution, adding catalyst, stirring, centrifugal washing, centrifuging to obtain lower layer solid and drying.

HUANG W, XIE L, AI W, DU Z, LI W, YI M

Ladder-shaped nano graphene strip, has handrail whose left and right ends are fixed with graphene nanometer belt electrode, where electrode is provided with two rows of unlimited regular hexagon crystals.

LU F, WANG W, YAN S, YANG H, CHEN J, CAI Y

Non-symmetrical peak lightly doped drain structure for graphene nano-strip FET, has graphite strip arranged close to source region, doped part arranged close to channel, and device drain region arranged non-symmetrical to source region.

WANG W, YANG H, LU F, JIANG S

Parallel connection type graphene nanometer strip structure, has parallel nano graphene strip arranged at middle part of electrode, where two sides of strip form arm chair shape, and length and width of electrode and strip are changed.

YAN S, WANG W, CHEN J

Synthesis of ternary nano composite material used for super capacitor electrode material, comprises putting MCM-41 to hydrochloric acid, adding aniline monomer, adding oxidant ammonium persulfate, and adding oxidized graphene suspension.

WANG L, YAN Z, MA Y, FAN Q, FENG X, HUANG W