国家/地区 中国（33）
IPC部 C（24） H（7） G（6）
B（2）
IPC大类 C01（14） C23（6） H01（6）
C03（5） G01（4） C30（2）
IPC小类 C01B（14） C23C（6） H01L（6）
C03C（5） G01N（3） C30B（2）
IPC C01B032/186（10） C23C016/26（6） C03C017/22（5）
C01B032/194（4） H01L033/00（3） C23C016/54（2）
C30B029/02（2） H01L021/336（2） H01L033/64（2）
H01L051/05（2）
发明人 LIU Z（12） PENG H（11） ZHANG J（10）
SUN Y（5） ZHANG Y（5） GAO Z（4）
LI Y（4） LIU K（4） SUN L（4）
XU S（4） LIU H（3） LIU X（3）
WANG Y（3） ZHANG Z（3） ZHAO Z（3）
公开年 2019（14） 2020（10） 2021（9）
申请年 2019（33）
专利权人 UNIV PEKING（33）

Detecting grain boundaries of two-dimensional material involves slowly heating two-dimensional material on metal foil in heating device to realize optical visualization of grain boundaries in graphene.

LIU K, XU X, ZOU D, LIU C

Method for non-destructive detecting graphene point defect comprises baking graphene on metal foil slowly in baking device to realize optical visualization of middle point defect of graphene.

LIU K, XU X, ZOU D, LIU C

Use of volatile small molecule compounds in preparation of suspended two-dimensional material films by clean transfer for transmission electron microscopy carrier network, high-resolution structure analysis of single particles, or high-resolution single-atom imaging.

PENG H, ZHENG L

Preparation of graphene glass by providing glass substrate, placing glass substrate in reaction chamber, introducing carbon source, and performing plasma enhanced chemical vapor deposition reaction on glass substrate to grow graphene.

LIU Z, SHAN J, ZHANG Y

On-chip micro ionization vacuum sensor used for middle and low vacuum field comprises first insulating layer orderly arranged on one side of micro-electronic source on chip, first and second collecting electrode, second insulating layer.

WEI X, YANG W

Polyethylene-graphene composite material comprises polyethylene and graphene.

ZHANG J, SUN Y, GONG H

Self-aligned patterning method for source and drain contact metals of undoped thin film transistors, involves using photoresist as mask, and opening window to define total pattern size of source and drain regions and gate.

QIU C, MENG L, LIANG S, ZHANG Z, PENG L

Graphene composite metal foil double-side growth device has chemical vapor deposition furnace comprising plasma glow region and heating growth region, and connected with unwinding shaft and winding shaft on both sides.

PENG H, CAO F, YANG H, WANG K, WANG X, LIU Z

Growth method of multilayer graphene used for electrons, photoelectrons and catalysis by forming graphene core on substrate by vapor deposition, and changing growth condition, continuously growing, and forming multilayer graphene.

LIU Z, PENG H, SUN L, ZHONG S, LI Y, WANG Y, YU Y, CHEN B

Growing single-crystal graphene using single crystal copper foil with any index surface, by preparing single crystal copper foil, selecting single crystal copper foil as substrate, and growing crystal graphene on single crystal copper foil.

LIU K, ZHANG Z, YU D, WANG E