国家/地区 中国（8）
IPC部 H（8）
IPC大类 H01（8）
IPC小类 H01L（4） H01P（2）
IPC H01L021/02（2）
发明人 HAO Y（5） NING J（5） ZHANG J（5）
WANG D（4） CHEN Z（3） ZHANG Y（3）
FAN C（2） MA P（2） SHEN X（2）
WU B（2） ZHANG C（2） ZHANG W（2）
公开年 2018（7）
申请年 2018（8）
专利权人 UNIV XIDIAN（8）

Preparing gallium nitride/aluminium gallium nitride (GaN/AlGaN) heterojunction material based on single crystal diamond substrate involves selecting single crystal diamond substrate, coating graphene layer on crystal diamond substrate.

REN Z, ZHANG Y, ZHANG J, NING J, HAO Y

Graphene nano-sheet-based broadband tunable coplanar waveguide attenuator, has medium substrate provided with coplanar waveguide transmission line, and graphene nano-sheet for converting energy input from input port into thermal energy.

WU B, ZHANG Y, FAN C, ZHANG W, HE L

Wavelength tunable graphene oxide mode-locked all-fiber thulium laser for use in communication system, has polarization independent isolator welded with output coupler, where output end of coupler is connected with collimator.

WANG J, WANG X, CAO Y, DOU C, ZHU J, WEI Z

Coupling degree adjustable microstrip line coupler based on graphene nanosheets, in which equivalent DC resistance values that are changed to achieve different degrees of energy coupling, by varying resistivity of graphene nanosheets.

WU B, FAN C, ZHANG Y, HU Y, ZHANG W

Method for preparing graphene intercalation structured-gallium nitride-based LED device, involves magnetron sputtering aluminum nitride film on sapphire substrate, followed by allowing to high temperature annealing alloying.

NING J, ZHANG C, WANG D, ZHANG J, SHEN X, CHEN Z, MA P, HAO Y

Method for preparing gallium nitride based photoelectric detector, involves magnetron sputtering aluminum nitride film on sapphire substrate and growing single layer of graphene on copper substrate by chemical vapor deposition.

NING J, SHEN X, WANG D, ZHANG J, ZHANG C, CHEN Z, MA P, HAO Y

Method for preparing chemical vapor deposition graphene planar micro-supercapacitor, involves pressing and cleaning catalytic metal substrate and using chemical vapor deposition technique.

NING J, FENG X, WANG D, ZHANG J, MU M, HAO Y

Graphene insert layer structure based gallium nitride growing method involves growing high temperature gallium nitride on low temperature gallium nitride substrate by metal organic chemical vapor deposition method.

ZHANG J, XU X, CHEN Z, NING J, WANG D, HAO Y