国家/地区 中国（8） 澳大利亚（2）
IPC部 H（8） G（3） C（2）
IPC大类 H01（8） C23（2） G02（2）
IPC小类 H01L（6） C23C（2） G02F（2）
H01G（2）
IPC C23C016/26（2） G02F001/00（2） H01G011/86（2）
H01L029/16（2）
发明人 HAO Y（5） NING J（5） WANG D（5）
ZHANG J（5） MA P（4） WANG Y（3）
CAI M（2） DU L（2） GUO H（2）
HU Z（2） SHEN X（2） WANG S（2）
YUAN H（2） ZHANG C（2）
公开年 2020（5） 2021（5）
申请年 2020（10）
专利权人 UNIV XIDIAN（10）

Three-position through-silicon-via based on carbon nanotubes has three signal pads are fixed on through-silicon-via structure, and three signal pads are paved at different positions at through-silicon-via structure in mutually spaced manner.

LV H, GUAN W, YAN S, ZHAO R, ZHANG Y

Manufacture of laser-induced manganese dioxide and graphene micro super capacitor by soaking polyimide film in manganese chloride solution, bonding soaked polyimide film on hard substrate, drying, and separating.

NING J, GUO H, ZHANG J, XIA M, WANG D, MA P, HAO Y

Low-leakage gallium nitride Schottky barrier diode (SBD) device has fluorinated material passivated layer is located above aluminum gallium nitride layer, and cathode metal that is located on both side above aluminum gallium nitride layer.

NING J, ZHANG C, WANG D, ZHANG J, MA P, HAO Y

Preparation of micro super capacitor used for manufacturing large integrated circuit, involves pretreating catalytic metal, preparing graphene, designing photomasking mask plate, preparing graphene microelectrode, and adding gel electrolyte.

NING J, FENG X, WANG D, ZHANG J, MU M, HAO Y

Self- driven ultra-wide spectrum photo-detector based on n-gallium nitride-p-gallium selenium-graphene hetero-junction, has graphene layer which is separated from nickel/gold electrode and gold electrode respectively.

NING J, ZHOU Y, WANG D, SHEN X, ZHANG C, ZHANG J, MA P, HAO Y

Silicon carbide-based ohmic contact graphene preparation method, involves stripping transfer electrode pattern to form front electrode, and performing annealing treatment to finish preparation of silicon carbide-based contact with graphene.

HU Y, JI Y, GUO H, LIANG J, HE Y, YUAN H, WANG Y

Graphene-based phase modulator has substrate layer, metal layer and sandwich structure that includes lower confinement layer, graphene layer and upper confinement layer that are arranged in order from bottom to top.

WANG S, ZHANG Q, HU Z, CAI M, DU L, ZHANG H, CHEN Y, ZHOU Z

Graphene transistor for digital integrated circuit, comprises patterned substrate with ellipsoidal protrusion, channel layer, gate dielectric layer, source electrode, drain electrode and gate electrode on channel layer side of substrate.

NING J, WANG Y, WANG D, ZHANG J, SHEN X, DONG J, MA P, HAO Y

Mid-infrared voltage adjustable filter has second graphene layer that includes second extension whose surface is plated with second metal film and cladding that is located on sandwich structure layer located on substrate layer.

WANG S, CAI M, DU L, WU Z, HU Z, WANG Y, HAN T, LIU H

Method for preparing metal oxide/graphene heterojunction transistor, involves preparing gate electrode layer on surface of gate insulating layer silicone dioxide to obtain metal oxide/graphene heterojunction transistor.

SU J, YUAN H, LIN Z, CHANG J