国家/地区 中国（15）
IPC部 H（11） C（3） G（3）
IPC大类 H01（11） C30（3） C23（2）
IPC小类 H01L（8） C30B（3） H01Q（3）
C23C（2）
IPC H01L021/335（4） H01L029/778（4） C30B025/18（2）
C30B028/14（2） C30B029/16（2） H01L021/02（2）
H01Q017/00（2）
发明人 HAO Y（9） ZHANG J（8） MA P（5）
NING J（4） WANG D（4） HAN G（2）
LIU Y（2） WANG Y（2） YANG R（2）
ZHANG S（2）
公开年 2022（15）
申请年 2022（10）  2021（5） 
专利权人 UNIV XIDIAN（15）

Manufacturing gallium oxide-based power transistor with low-ohm contact, involves obtaining beta-gallium oxide substrate, depositing nickel/gold lamination on dielectric layer, manufacturing interconnection lead and manufacturing of gallium oxide base power transistor of low-ohm contact resistor.

HAO Y, LI Y, ZHENG X, LU X, HE Y, MA X

Preparation method for two-dimensional floating gate photoelectric transistor, involves stacking single-layer charge graphene trapping layer/tunneling layer/two-dimensional transition metal sulfide channel layer.

HAN G, LIU Y, ZHANG S, YANG Q, LUO Z

Gallium oxide solar blind UV detector used for fire early warning, target identification and information communication, comprises substrate, first gallium oxide channel layer, graphene layer, metal nano-structure layer and second channel layer.

HAO Y, ZHANG J, LIN Z, CHEN Z, CHANG J, SU J

Electro-optical modulation integrated waveguide structure, has cover layer covered on waveguide and semiconductor thin layer, top electrode located right above waveguide and tightly contact with cover layer, and bottom electrode located on side of waveguide.

HAO Y, HAN G, LIU Y, YAO D

Van der Waals epitaxial gallium nitride high electron mobility transistor device useful in power electronic system, has through hole opened in middle of substrate, two-dimensional material layer, first aluminum nitride layer, and second aluminum nitride layer.

HAO Y, MA P, ZENG Y, ZHANG C, ZHAO J, ZHANG J, WANG D, WU J, NING J

Transparent gallium nitride (GaN)-based transistor comprises substrate layer from bottom to sequentially, channel layer and barrier layer and source electrode located on barrier layer, gate electrode and drain electrode.

HAO Y, ZHANG J, ZHOU J, YANG W, FENG X, XING W, HE J, XU S, ZHAO X, LIU Z

Multi-frequency reconfigurable perfect wave absorbing body useful for absorbing terahertz electromagnetic wave in broadband communication and sensing fields, comprises graphene layer, first silicon layer, vanadium dioxide layer, second silicon layer and metal layer that are arranged in order.

BAI X, YANG R

Super-surface with circularly polarized wave asymmetric transmission and one-way wave-absorbing function useful for e.g. radar detection, comprises first and second medium substrates that are arranged on first and third medium substrates, and metal resonant unit comprising longitudinal edge.

ZHANG S, WANG Y, YANG R

Graphene circularly polarized wear-resistant antenna based on artificial magnetic conductor array comprises circularly polarized radiation unit, second flexible medium supporting layer and artificial magnetic conductor array reflecting plate stacked sequentially from top to bottom.

ZHANG J, RAO X, ZHENG B, TIAN Y, BAO J, WANG Y, LI N

Preparing diamond-based gallium nitride epitaxial substrate structure, involves preparing aluminum nitride nucleating layer on diamond substrate, growing graphene layer on surface of copper foil, and transferring onto aluminum nitride nucleation layer.

HAO Y, MA P, WANG D, JIA Y, ZHANG J, WU H, NING J