国家/地区 韩国（7） 美国（5） 欧洲专利局（EPO）（2）
IPC部 H（7） C（4）
IPC大类 H01（7） C23（2）
IPC小类 H01L（5） C23C（2）
IPC H01L021/02（3） H01L029/16（3） C23C016/02（2）
发明人 CHO Y（9）
公开年 2021（6） 2020（2）
申请年 2020（9）
专利权人 SAMSUNG ELEC.（5）

Manufacturing method of supercapacitor, involves performing thermal drawing process to produce fibers having diameter less than specific diameter, and forming solid electrolyte polymer by impregnating fibers in liquid electrolyte.

CHOI S T, LEESEUNGMIN, CHO Y, HEO N H, IN J, DUONG Q B

Producing graphene-carbon nanotube composite fiber, comprises e.g. preparing a first hybrid film coated with carbon nanotubes on upper surface of graphene synthesized on metal surface, and removing metal from the first film to prepare a second film.

LEE H, WOO C Y, HONG S G, CHO Y

Lignin depolymerization catalyst for producing lignin-derived bio-oil, comprises metal oxides, and graphene oxide on which metal oxide is supported and doped with nitrogen and metal particles.

PARKJUNGHOON, RANA M, CHO Y

Semiconductor device i.e. fin FET, for use in e.g. memories, has channel layer formed on gate dielectric and comprising two-dimensional semiconductor material, and source electrode and drain electrode electrically connected to channel layer.

LEE M, SEOL M, CHO Y, SHIN H

Method for forming graphene, involves preparing a substrate in a reaction chamber, performing a first growth process of growing multiple graphene aggregates apart from each other on the substrate at a first growth rate.

CHO Y, LEE C, KIM C, SHIN H, SHIN K, NGUYEN V L, SHIN K W, SHIN H J, LEE C S, CHO Y C

Forming transition metal dichalcogenide thin film on a substrate by treating substrate with metal organic material, and synthesizing a transition metal dichalcogenide on the substrate.

BYUN K, KIM H, PARK T, SHIN H, AHN W, LEEM M, CHO Y, JIN H, PIAO T, SHEN X, LIN M, ZHAO L, BYUN K E, KIM H S, PARK T J, SHIN H J, AHN W S, CHO Y C

Anode active material used in anode for lithium secondary battery, comprises silicon-carbon composite, and two different graphites.

CHO Y, OH D, CHU H, SOH H, CHOI Y, HWANG Y, KOO C Y, OH D R, CHU H Y, CHOI Y Y, YUBIN H

Pre-treatment of substrate e.g. non-metal substrate such as semiconductor substrate or dielectric substrate used for forming graphene directly, involves using pre-treatment gas including carbon source and hydrogen.

SHIN K, LEE J, NAM S, SHIN H, LIM H, JUNG A, BYUN K, CHO Y, SHIN K W, LEE J H, NAM S G, SHIN H J, LIM H S, JUNG A R, BYUN K E, LEE J I, CHO Y C

Layer structure for use in diffusion barrier layer and a nanocrystalline graphene layer applied to an electronic device, comprises diffusion barrier layer on the first material layer, diffusion barrier layer edge aligns substantially.

SONG H, NAM S, CHO Y, PARK S, SHIN H, LEE J