国家/地区 韩国（8） 美国（8）
IPC部 H（7） C（6）
IPC大类 H01（7） C01（4） C23（4）
IPC小类 H01L（5） C01B（4） C23C（4）
H01M（2）
IPC C01B032/186（4） H01L029/16（4） C23C016/26（3）
H01L021/02（3） H01L021/768（3） H01L023/522（3）
H01L023/532（3） H01L023/528（2） H01L029/06（2）
H01M004/04（2）
发明人 CHO Y（10）
公开年 2020（10）
申请年 2019（6）  2018（2）  2020（2） 
专利权人 SAMSUNG ELEC.（7）

Measuring sensitivity of receptor e.g. photoreceptor by preparing vesicle containing receptor, forming lipid bilayer on surface of graphene-based electrode and measuring by cyclic voltammetry.

KIMJAEHEON, PARK B H, SEOK S H, SANG R Y, WOO D H, SEOK K, CHO Y, PARK S B, TAIKJIN L, CHULKI K, SUH M

Pre-treatment of substrate e.g. non-metal substrate such as semiconductor substrate or dielectric substrate used for forming graphene directly, involves using pre-treatment gas including carbon source and hydrogen.

SHIN K, LEE J, NAM S, SHIN H, LIM H, JUNG A, BYUN K, CHO Y, SHIN K W, LEE J H, NAM S G, SHIN H J, LIM H S, JUNG A R, BYUN K E, LEE J I, CHO Y C

Layer structure for use in diffusion barrier layer and a nanocrystalline graphene layer applied to an electronic device, comprises diffusion barrier layer on the first material layer, diffusion barrier layer edge aligns substantially.

SONG H, NAM S, CHO Y, PARK S, SHIN H, LEE J

Graphene formation involves forming carbon monolayer on substrate by injecting reaction gas into reaction chamber, where former reaction gas comprises source being carbon source and including component.

SHIN H, SHIN K, KIM C, NAM S, BYUN K, SONG H, LEE E, LEE C, JUNG A, CHO Y, SHIN H J, SHIN K W, NAM S G, BYUN K E, SONG H J, LEE C S, JUNG A R, CHO Y C

Aluminum secondary battery for e.g. electric vehicles, comprises negative electrode component, positive electrode component comprising current collector and composite of transition metal chalcogenide and graphene, and electrolyte component.

YOO C, YOON H, CHO Y, PARK S, LEE Y A, PARK J H, YOO C Y, YUN H N, HYUN C Y, LEEYOUNGA, PARK J

Formation of nanocrystalline graphene used for semiconductor device, involves arranging substrate in chamber, forming protective layer, injecting reaction gas, generating plasma, and growing nanocrystalline graphene on protective layer.

JUNG A, SHIN K, BYUN K, SHIN H, LIM H, NAM S, SONG H, CHO Y, JUNG A R, SHIN K W, BYUN K E, SHIN H J, LIM H S, NAM S G, SONG H J, CHO Y C

Fabricating nano/micro composite fiber for storing electrical energy by wet spinning aqueous dispersion of graphene or graphene/carbon nanotube to prepare a microfiber, bundling, heating, and sheathing with insulating material.

PARK S, SHIN M, KIM H, YEO C, CHO Y, CHO K

Interconnect structure for electronic device, has metal bonding layer for providing interfacial bonding between metal interconnect and graphene layer, where metal bonding layer includes metal material.

NAM S, SHIN H, SHIN K, KIM C, BYUN K, SONG H, LEE E, LEE C, JUNG A, CHO Y, NAM S G, SHIN H J, SHIN K W, BYUN K E, SONG H J, LEE C S, JUNG A R, CHO Y C

Directly growing of carbon material in production of high-quality graphene, involves adsorbing carbons onto substrate by supplying carbons to substrate, and removing unreacted carbon residues from substrate after supplying carbons.

KIM C, SHIN H, BYUN K, SHIN K, LEE C, NAM S, AN S, LEE J, CHO Y, SHIN H J, BYUN K E, SHIN K W, LEE C S, NAM S G, AHN S J, LEE J H, LEE J I, CHO Y C

Interconnect structure for use in electronic device, has cap layer provided on surface of conductive wiring and which includes nanocrystalline graphene comprising nano-sized crystals.

BYUN K, SHIN K, KIM Y, SHIN H, SONG H, LEE C, KIM C, CHO Y, BIAN Q, SHEN J, JIN Y, SHEN X, SONG X, LI C, JIN C, ZHAO L, BYUN K E, SHIN K W, HUN K Y, SHIN H J, SONG H J, LEE C S, CHO Y C